Electrochemical properties of Bi2Se3 layers semiconductor elaborated by electrodeposition

The semiconductor, Bi2Se3 layers was electrochemically deposited on Indium Tin Oxide substrate (ITO) from a nitric acid, Bi (NO3)3 center dot 5H2O and H2SeO3 solution. The results of the electrochemical behavior of Bi2Se3 were as follows: Cyclic voltammetry (CV) studies revealed that the electrodeposition of Bi2Se3 was performed at a neg-ative potential of -0.22 V vs SCE, according to a quasi-reversible reaction controlled by the diffusion process. Chronoamperometry (CA) showed that the electrodeposition of Bi2Se3 follows a 3D instantaneous nucleation model with diffusion-controlled growth. X-ray diffraction analysis indicated that the resulting layers at -0.22 V vs SCE exhibited a Rhombohedral Bi2Se3 structure with a preferred orientation (113) and the 2:3 sto-ichiometric ratio of Bi and Se was checked by EDS quantitative analysis. SEM images revealed the formation of a uniform size mainly consisting of nanoparticles with spherical shapes. The Bi2Se3 obtained layers are n-type semiconductors with an optical band gap of 2.35 eV.

Automated summary

The semiconductor Bi2Se3 layers were successfully deposited on ITO substrate via electrochemical deposition. The electrochemical behavior of Bi2Se3 was investigated, and it was found that the electrodeposition process was controlled by diffusion and followed a 3D instantaneous nucleation model. The resulting layers exhibited a specific structure and stoichiometric ratio, as confirmed by X-ray diffraction and EDS analysis.