Impact of 100 MeV high-energy proton irradiation on β-Ga2O3 solar-blind photodetector: Oxygen vacancies formation and resistance switching effect

beta-Ga2O3 based solar-blind photodetectors have strong radiation hardness and great potential applications in Earth's space environment due to the large bandgap and high bond energy. In this work, we investigated the photoelectric properties influence of beta-Ga2O3 photodetector irradiated by 100 MeV high-energy protons which are the primary components in the inner belt of the Van Allen radiation belts where solar-blind photodetectors mainly worked. After proton irradiation, due to the formation of more oxygen vacancies and their migration driven by bias at the metal/semiconductor interface, transportation of carriers transforms with electron tunneling conduction for low-resistance state and thermionic emission for high resistance state. As a result, the current-voltage curves of beta-Ga2O3 solar-blind photodetectors exhibit apparent hysteresis loops. The photoresponsivity of beta-Ga2O3 photodetectors slightly increases from 1.2 x 10(3) to 1.4 x 10(3) A/W after irradiation, and the photoresponse speed becomes faster at a negative voltage while slower at positive voltage. The results reveal the effects of high-energy proton irradiation on beta-Ga2O3 solar-blind photodetectors and provide a basis for the study of their use in a radiation harsh environment.

Automated summary

The influence of high-energy proton irradiation on beta-Ga2O3 solar-blind photodetectors was investigated. Proton irradiation led to an increase in oxygen vacancies and carrier migration at the metal/semiconductor interface driven by bias. The results showed a slight increase in photoresponsivity and exhibited apparent hysteresis loops.