期刊
JOURNAL OF APPLIED PHYSICS
卷 132, 期 17, 页码 -出版社
AIP Publishing
DOI: 10.1063/5.0125609
关键词
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资金
- VLSI Design and Education Center (VDEC), University of Tokyo
- Synopsys, Inc
This study focuses on the breakdown operations modeling of gallium oxide (Ga2O3), proposing models that consider both soft and hard breakdown phenomena. The impact ionization model of β-Ga2O3 in <001> orientation is improved, reproducing hard breakdown operations. A barrier lowering model is also determined for reproducing soft breakdown operations. These modeling outcomes are crucial for predicting reverse-biased operations and further technological development and applications of Ga2O3.
Gallium oxide (Ga2O3) attracts considerable technological interest because of its high Baliga's figure-of-merit and high breakdown voltages. As the models for the breakdown behavior of n-doped Ga2O3 that consider soft (barrier lowering) and hard (avalanche effect) breakdowns are still lacking, in this study, we model the breakdown operations in <001> oriented Schottky barrier diodes considering both the soft- and hard-breakdown phenomena. The completion of the impact ionization model of beta-Ga2O3 in <001> orientation is proposed by determining the hole impact ionization coefficient, thereby reproducing hard breakdown operations. Moreover, a barrier lowering model is determined for reproducing soft breakdown operations. The outcomes of the proposed modeling investigation are expected to be crucial for predicting the reverse-biased operations of beta-Ga2O3 in <001> orientation to facilitate further technological development and applications of Ga2O3. Published under an exclusive license by AIP Publishing.
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