Hard- and soft-breakdown modeling in <001> oriented β-Ga2O3 Schottky barrier diode

Gallium oxide (Ga2O3) attracts considerable technological interest because of its high Baliga's figure-of-merit and high breakdown voltages. As the models for the breakdown behavior of n-doped Ga2O3 that consider soft (barrier lowering) and hard (avalanche effect) breakdowns are still lacking, in this study, we model the breakdown operations in <001> oriented Schottky barrier diodes considering both the soft- and hard-breakdown phenomena. The completion of the impact ionization model of beta-Ga2O3 in <001> orientation is proposed by determining the hole impact ionization coefficient, thereby reproducing hard breakdown operations. Moreover, a barrier lowering model is determined for reproducing soft breakdown operations. The outcomes of the proposed modeling investigation are expected to be crucial for predicting the reverse-biased operations of beta-Ga2O3 in <001> orientation to facilitate further technological development and applications of Ga2O3. Published under an exclusive license by AIP Publishing.

Automated summary

This study focuses on the breakdown operations modeling of gallium oxide (Ga2O3), proposing models that consider both soft and hard breakdown phenomena. The impact ionization model of β-Ga2O3 in <001> orientation is improved, reproducing hard breakdown operations. A barrier lowering model is also determined for reproducing soft breakdown operations. These modeling outcomes are crucial for predicting reverse-biased operations and further technological development and applications of Ga2O3.