相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Proposition of a model elucidating the AlN-on-Si (111) microstructure
N. Mante et al.
JOURNAL OF APPLIED PHYSICS (2018)
Universal description of III-V/Si epitaxial growth processes
I. Lucci et al.
PHYSICAL REVIEW MATERIALS (2018)
Polarity Control in Group-III Nitrides beyond Pragmatism
Stefan Mohn et al.
PHYSICAL REVIEW APPLIED (2016)
Physical origins of intrinsic stresses in Volmer-Weber thin films
JA Floro et al.
MRS BULLETIN (2002)
Elastic relaxation of truncated pyramidal quantum dots and quantum wires in a half space: An analytical calculation
F Glas
JOURNAL OF APPLIED PHYSICS (2001)
Defect characterization in ZnO layers grown by plasma-enhanced molecular-beam epitaxy on (0001) sapphire substrates
F Vigué et al.
APPLIED PHYSICS LETTERS (2001)
Defects in semiconductors and their effects on devices
S Mahajan
ACTA MATERIALIA (2000)