4.7 Article

Nitrogen vacancy luminescence and their phonon sidebands characteristics in nitrogen-doped diamond

期刊

JOURNAL OF ALLOYS AND COMPOUNDS
卷 924, 期 -, 页码 -

出版社

ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2022.166507

关键词

Diamond; Electron irradiation; Nitrogen vacancy center; Phonon sidebands; Photoluminescence

资金

  1. National Natural Science Foundation of China [U21A2073]
  2. Shanxi Scholarship Council of China [2020-129]

向作者/读者索取更多资源

In this study, the luminescence properties and phonon sidebands of nitrogen vacancy (NV) centers in high and low nitrogen diamonds after electron irradiation and annealing were investigated. It was found that the phonon sidebands were caused by phonon emission behavior during the induced transitions from laser excitation, with estimated phonon energies for NV0 and NV- centers. As measurement temperature increased, the likelihood of non-radiative transitions resulting in the absence of phonon sidebands also increased, leading to the synchronous quenching of NV luminescence. The lattice environment and measurement temperature play roles in the manifestation of phonon sidebands of NV centers.
In this work, the nitrogen vacancy (NV) luminescence properties and their phonon sidebands in both high and low nitrogen diamonds after electron irradiation and subsequent annealing were thoroughly investigated. From the extracted results, it was demonstrated that the phonon sidebands were caused by the phonon emission behavior of the electrons located in the NV center during the induced transition process from the laser excitation. On top of that, the phonon energies of the NV0 (neutral) and NV- (negatively charged) centers were estimated at about 45 meV and 63 meV, respectively. As the measurement temperature increased, the excited electrons were more likely to return to the ground state by employing non-radiative transitions without generating phonon sidebands. As a result, the synchronous quenching of the NV luminescence and their phonon sidebands effect takes place. The complex lattice environment of the NV centers in the high nitrogen diamond leads also to a smaller thermal quenching activation energy, while the phonon process at a relatively high measurement temperature results in the manifestation of more obvious phonon sidebands of the NV centers. (c) 2022 Elsevier B.V. All rights reserved.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.7
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据