Highly induced photosensing behavior of Erbium (Er), Yttrium (Y) and Terbium (Tb) doped nanostructured Cadmium Sulphide (CdS) thin films prepared by nebulizer spray pyrolysis method

Using nebulizer spray pyrolysis method, we investigate the optoelectronic properties of Erbium (Er:2 %), Yttrium (Y:2 %) and Terbium (Tb:2 %) doped CdS thin films. The pure CdS film belongs to the II-IV semiconductor chalcogenide family, and it has good optical properties, making it appropriate for photo-detector applications. In addition, rare earth (RE) elements such as Erbium (Er), Yttrium (Y) and Terbium (Tb) doped CdS thin film is more suitable for photo sensing applications due to their good physical and optical properties. The polycrystalline structure of pure and doped CdS films with the structure of hexagonal and preferential orientation (002) was shown by structural analysis (XRD). In addition, the phase purity of RE doped CdS thin films was confirmed using Raman spectra. The direct bandgap values fell (2.52-2.47 eV) for the RE dopant, reaching a minimum for the film formed with RE of high ionic radius Tb. Three emission peaks were discovered in photoluminescence (PL) spectra: a strong dominant peak at 525 nm due to interband transitions and a peak with minimum intensity at 475 and 640 nm. With the exception of two RE materials, Er and Y, the CdS film coated with Tb had improved photo-sensitivity characteristics. Responsivity (3.32 AW(-1)), detectivity (2.82 x 10(11) Jones), and external quantum efficiency (883 %) are the photo sensing values of Tb doped CdS film. The Tb coated films were found to exhibit good optical properties, making them suitable for photodetector applications. (C) 2022 Elsevier B.V. All rights reserved.

Automated summary

By investigating Erbium, Yttrium, and Terbium-doped CdS thin films, it was found that they are suitable for photodetector applications, with Tb-doped film exhibiting better photo-sensitivity characteristics.