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Yiyin Zhou et al.
PHOTONICS RESEARCH (2022)
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Growth of relaxed GeSn film with high Sn content via Sn component-grade buffer layer structure
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Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys
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Effects of Annealing on the Behavior of Sn in GeSn Alloy and GeSn-Based Photodetectors
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Electrically injected GeSn lasers on Si operating up to 100 K
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Room-temperature direct-bandgap electroluminescence from type-I GeSn/SiGeSn multiple quantum wells for 2 μm LEDs
Linzhi Peng et al.
JOURNAL OF LUMINESCENCE (2020)
Growth mode control for direct-gap core/shell Ge/GeSn nanowire light emission
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Strain evolution in SiGe-on-insulator fabricated by a modified germanium condensation technique with gradually reduced condensation temperature
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Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
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ACS PHOTONICS (2019)
Enhanced Sn incorporation in GeSn epitaxial semiconductors via strain relaxation
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JOURNAL OF APPLIED PHYSICS (2019)
GeSn growth kinetics in reduced pressure chemical vapor deposition from Ge2H6 and SnCl4
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JOURNAL OF CRYSTAL GROWTH (2018)
The thermal stability of epitaxial GeSn layers
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APL MATERIALS (2018)
Band gap and strain engineering of pseudomorphic Ge1-x-ySixSny alloys on Ge and GaAs for photonic applications
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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2018)
Sn-based waveguide p-i-n photodetector with strained GeSn/Ge multiple-quantum-well active layer
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OPTICS LETTERS (2017)
Free-running Sn precipitates: an efficient phase separation mechanism for metastable Ge1-xSnx epilayers
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Short-wave infrared LEDs from GeSn/SiGeSn multiple quantum wells
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OPTICA (2017)
Optically pumped GeSn micro-disks with 16% Sn lasing at 3.1 μm up to 180K
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APPLIED PHYSICS LETTERS (2017)
Properties of pseudomorphic and relaxed germanium1-xtinx alloys (x < 0.185) grown by MBE
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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2017)
Strong room temperature electroluminescence from lateral p-SiGe/i-Ge/n-SiGe heterojunction diodes on silicon-on-insulator substrate
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APPLIED PHYSICS LETTERS (2016)
GeSn p-i-n photodetectors with GeSn layer grown by magnetron sputtering epitaxy
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APPLIED PHYSICS LETTERS (2016)
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APPLIED PHYSICS LETTERS (2016)
Systematic study of Ge1-xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics
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JOURNAL OF APPLIED PHYSICS (2016)
Si-Ge-Sn alloys: From growth to applications
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Room Temperature Electroluminescence from Tensile-Strained Si0.13Ge0.87/Ge Multiple Quantum Wells on a Ge Virtual Substrate
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Electroluminescence from GeSn heterostructure pin diodes at the indirect to direct transition
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APPLIED PHYSICS LETTERS (2015)
Direct Bandgap Group IV Epitaxy on Si for Laser Applications
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CHEMISTRY OF MATERIALS (2015)
Lasing in direct-bandgap GeSn alloy grown on Si
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NATURE PHOTONICS (2015)
Temperature-dependent direct transition energy in Ge0.99Sn0.01 film grown on Si measured by photoreflectance spectroscopy
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THIN SOLID FILMS (2015)
Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence
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APPLIED PHYSICS LETTERS (2014)
Competition of optical transitions between direct and indirect bandgaps in Ge1-xSnx
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APPLIED PHYSICS LETTERS (2014)
Tin surface segregation, desorption, and island formation during post-growth annealing of strained epitaxial Ge1-xSnx layer on Ge(001) substrate
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APPLIED SURFACE SCIENCE (2014)
Epitaxial growth of strained and unstrained GeSn alloys up to 25% Sn
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Lattice constant and substitutional composition of GeSn alloys grown by molecular beam epitaxy
Nupur Bhargava et al.
APPLIED PHYSICS LETTERS (2013)
Mid-infrared electroluminescence from a Ge/Ge0.922Sn0.078/Ge double heterostructure p-i-n diode on a Si substrate
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APPLIED PHYSICS LETTERS (2013)
Strain relaxation and Sn segregation in GeSn epilayers under thermal treatment
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APPLIED PHYSICS LETTERS (2013)
Achieving direct band gap in germanium through integration of Sn alloying and external strain
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JOURNAL OF APPLIED PHYSICS (2013)
Material characterization of high Sn-content, compressively-strained GeSn epitaxial films after rapid thermal processing
Robert Chen et al.
JOURNAL OF CRYSTAL GROWTH (2013)
Relaxed and Strained Patterned Germanium-Tin Structures: A Raman Scattering Study
Ran Cheng et al.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2013)
GeSn p-i-n detectors integrated on Si with up to 4% Sn
M. Oehme et al.
APPLIED PHYSICS LETTERS (2012)
Electroluminescence from strained germanium membranes and implications for an efficient Si-compatible laser
Donguk Nam et al.
APPLIED PHYSICS LETTERS (2012)
Germanium-Tin n+/p Junction Formed Using Phosphorus Ion Implant and 400 °C Rapid Thermal Anneal
Lanxiang Wang et al.
IEEE ELECTRON DEVICE LETTERS (2012)
GeSn/Ge heterostructure short-wave infrared photodetectors on silicon
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OPTICS EXPRESS (2012)
Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition
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APPLIED PHYSICS LETTERS (2011)
Sn-mediated Ge/Ge(001) growth by low-temperature molecular-beam epitaxy: Surface smoothening and enhanced epitaxial thickness
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JOURNAL OF APPLIED PHYSICS (2005)
X-ray reciprocal space mapping studies of strain relaxation in thin SiGe layers (≤ 100 nm) using a low temperature growth step
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JOURNAL OF CRYSTAL GROWTH (2001)