T2SL/InP/T2SL pBp extended SWIR barriode with InGaAs/GaAsSb absorption material lattice matched to InP

In this paper we report the design, fabrication and characterization of an innovative T2SL/InP/T2SL pBp structure based on an InGaAs/GaAsSb superlattice absorption layer lattice matched to an InP substrate. The device exhibits a cutoff wavelength of 2.3 mu m at room temperature and 2.2 mu m at 200 K. At 200 K, a dark current density of 1.3x10(-6) A/cm(2) under 0.1 V bias operation was measured. At room temperature, a quantum efficiency up to 37% and a specific detectivity of 1x10(10) cmHz(1/2)/W were achieved at 2.2 mu m. The overall performance of these pBp detectors demonstrates their potential as extended short wavelength infrared detectors.

Automated summary

In this study, an innovative T2SL/InP/T2SL pBp structure was designed, fabricated and characterized. The device exhibited a cutoff wavelength of 2.3 μm at room temperature and 2.2 μm at 200K. At 200K, the device showed a low dark current density, while at room temperature it achieved a high quantum efficiency and specific detectivity. Therefore, these pBp detectors demonstrated their potential as extended short wavelength infrared detectors.