期刊
IEEE TRANSACTIONS ON POWER ELECTRONICS
卷 37, 期 9, 页码 10075-10080出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TPEL.2022.3160698
关键词
Transformer cores; Transformers; Ferrites; Power transformer insulation; Silicon; Circuit faults; Inductance; Microelectro-mechanical systems (MEMS); microintegrated transformer; Ni-Zn ferrite core; packaged power supply on chip (PwrSoC); through-silicon via (TSV)
资金
- Natural Science Foundation of Beijing Municipality [JQ20016]
- Advanced Aerospace Force Innovation Workstation [HKCX2020-02-015]
- Beijing Science andTechnology Planning Project [Z201100007720006]
- National Natural Fund of China [52006003]
This study presents a through-silicon via high-aspect-ratio toroidal transformer manufactured using microelectro-mechanical systems and electroplating. By wrapping a 1.2 mm high toroidal Ni-Zn ferrite core in silicon, a compact transformer with excellent performance in a high frequency range is achieved.
A miniature integrable transformer is an obstacle to the miniaturization of packaged power supply on chip (PwrSoC). This letter introduces a through-silicon via (TSV) high-aspect-ratio toroidal transformer manufactured using microelectro-mechanical systems and electroplating. The primary coil and secondary coil of the transformer are interleaved on the toroidal core cavity, which is entirely wrapped in silicon, and a 1.2 mm high toroidal Ni-Zn ferrite core is formed. A 15:15 turn transformer is fabricated with a compact coil size of phi 4.1 x 2 mm with an aspect ratio (ratio of TSV depth to diameter) of 20. Measurements show that it has an inductance of 105 to 115 nH in a high frequency range of 1 to 80 MHz and a coupling coefficient of similar to 0.7 in the range of 1 MHz to >15 MHz. Compared to that of the transformer without the Ni-Zn ferrite core, the coupling coefficient of the toroidal transformer increases by 40% with an inductance increase of 20%. At a frequency of 14 MHz, the transformer has a maximum quality factor of 16.7. The small size, IC compatible manufacturing process and excellent performance at high-frequency of the transformer proposed, meet the further integrated and miniaturized needs of PwrSoC.
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