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Article
Engineering, Electrical & Electronic
Qiming He et al.
Summary: This work demonstrates vertical beta-Ga2O3 Schottky barrier diodes (SBDs) breaking through the power figure of merit of 1 GW/cm(2) without edge termination. The unreliable surface on the top of the drift region, which naturally formed in air, was removed by inductively coupled plasma etching. The repaired surface was exposed to ambient air for less than 10 minutes during the entire preparation process. Compared with the excessive air exposure samples, the leakage current was well suppressed for the Ni/beta-Ga2O3 SBDs fabricated on a clean surface. Moreover, the blocking voltage reaches a maximum value of 1720 V, and the forward/reverse characteristics of the diodes on the same wafer show good uniformity. These results pave the way for further improving the performance of beta-Ga2O3 devices and verify the potential of beta-Ga2O3 SBDs for power applications.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Feng Zhou et al.
Summary: The technical progress of Ga2O3 power diodes is limited by a lack of performance evaluation and reliability validation, but they have shown great potential in high-efficiency, high-power, and high-reliability applications.
IEEE TRANSACTIONS ON POWER ELECTRONICS
(2022)
Article
Physics, Applied
Chenlu Wang et al.
Summary: In this study, high performance hysteresis-free and ps-switching depletion/enhancement-mode beta-Ga2O3 heterojunction field effect transistors (FETs) with state-of-the-art power figure-of-merit (P-FOM) were successfully established. The positive threshold voltage and low subthreshold slope were achieved by optimizing the p-NiOx/n-Ga2O3 interface and n-Ga2O3 recess technology. Incorporation of T-shaped NiOx improved the trade-off between on-resistance and breakdown voltage, resulting in the highest reported P-FOM among lateral Ga2O3 FETs. The high-quality interface allowed for negligible hysteresis and ps-switching, demonstrating the great potential of Ga2O3 HJ-FETs in high-power, high-efficiency, and high-speed power electronics.
APPLIED PHYSICS LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Pengfei Dong et al.
Summary: By employing a deep trench with a filled thick SiO2 layer structure, the β-Ga2O3 Schottky Barrier Diode (SBD) demonstrates improved breakdown voltage and specific on-resistance, exceeding the performance of SiC and GaN. With state-of-the-art values of these performance metrics, the vertical β-Ga2O3 SBDs show great potential for high voltage and high power applications.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Yibo Wang et al.
Summary: This study demonstrates the first beta-Ga2O3 lateral superjunction (SJ)-equivalent metal-oxide-semiconductor field-effect transistors (MOSFETs). The SJ structure is constructed by the selective epitaxial filling of p-NiO pillars into the trenched drift region of beta-Ga2O3. Experimental results show that the Ga(2)O(3) SJ-equivalent MOSFETs outperform the control transistor and exhibit improved breakdown voltage and power figure-of-merit. The charge imbalance caused by substrate-assisted depletion effect and interfacial charges is identified as the reason for the deviation from theoretical predictions.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Engineering, Electrical & Electronic
Yuangang Wang et al.
Summary: By implementing a composite terminal structure with a p-NiO junction termination extension and a small-angle beveled field plate, high-performance p-NiO/ss-Ga2O3 heterojunction diodes were successfully demonstrated. This structure significantly increases the breakdown voltage of ss-Ga2O3 and achieves low ON-resistance, making it a promising candidate for various applications.
IEEE TRANSACTIONS ON POWER ELECTRONICS
(2022)
Article
Multidisciplinary Sciences
Jincheng Zhang et al.
Summary: In this study, Ga2O3 heterojunction PN diodes are demonstrated to overcome the challenges of high breakdown voltage and low doping, achieving high power figure-of-merit and showing great potential for next-generation power electronics applications.
NATURE COMMUNICATIONS
(2022)
Article
Engineering, Electrical & Electronic
Hehe Gong et al.
Summary: Ga2O3 power diodes are crucial in power electronics, and NiO/Ga2O3 p-n heterojunction diodes have demonstrated better performance and stability, with high breakdown voltage and transient current capability superior to past research results.
IEEE TRANSACTIONS ON POWER ELECTRONICS
(2021)
Article
Physics, Applied
Weibing Hao et al.
Summary: In this study, a high-performance NiO/beta-Ga2O3 pn heterojunction diode with an optimized interface by annealing was reported. The APND device exhibited lower specific on-resistance and higher breakdown voltage compared to the PND, leading to a record high power figure of merit in Ga2O3-based pn diodes. Furthermore, the stable interface at elevated temperatures contributed to lower hysteresis and improved electrical performance. This work lays the foundation for enhancing the performance of Ga2O3 diodes through interface engineering.
APPLIED PHYSICS LETTERS
(2021)
Article
Physics, Applied
Qinglong Yan et al.
Summary: This paper presents high-performance beta-Ga2O3 hetero-junction barrier Schottky (HJBS) diodes with p-type NiOx, achieving low on-resistance, high breakdown voltage, and a high DC figure of merit while minimizing reverse leakage current by shrinking the width of beta-Ga2O3. The incorporation of p-type NiOx enhances the sidewall depletion effect in beta-Ga2O3 HJBS diodes, making them an effective route for Ga2O3 power device technology with high PFOM and reduced reverse leakage current.
APPLIED PHYSICS LETTERS
(2021)
Article
Crystallography
Hong Zhou et al.
Summary: This study comprehensively investigates and optimizes the implementation of p-NiO in beta-Ga2O3-based diodes through TCAD simulation, providing design guidelines for future Ga2O3 diodes. The findings suggest that adjusting the doping concentration and dimensions of p-NiO can significantly improve the breakdown voltage of the diode.
Article
Engineering, Electrical & Electronic
Chenlu Wang et al.
Summary: This study demonstrates the achievement of high-performance beta-Ga2O3 power devices by incorporating p-type NiOX. The p-n heterojunction diodes and gate field-effect-transistors both show state-of-the-art power figure of merit, providing insights for the development of Ga2O3 power devices.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Haoxun Luo et al.
Summary: In this work, a high-performance vertical NiO/beta-Ga2O3 heterojunction p-n diode was successfully fabricated, showing high breakdown voltage and low specific ON-resistance. Through optimized fabrication process, superior performance was achieved, contributing significantly to the development of power devices.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Engineering, Electrical & Electronic
Yuanjie Lv et al.
Summary: This article reports the first vertical beta-Ga2O3 JBS diode, which successfully addresses the issue of sacrifice of p-type beta-Ga2O3 by using p-type NiO, achieving high breakdown voltage and low ON-resistance. Experimental results demonstrate that this diode has higher performance parameters and better combinations of forward current and breakdown voltage.
IEEE TRANSACTIONS ON POWER ELECTRONICS
(2021)
Article
Engineering, Electrical & Electronic
Xing Lu et al.
IEEE ELECTRON DEVICE LETTERS
(2020)
Article
Physics, Applied
H. H. Gong et al.
APPLIED PHYSICS LETTERS
(2020)
Article
Nanoscience & Nanotechnology
Kuang-Hui Li et al.
ACS APPLIED MATERIALS & INTERFACES
(2019)
Article
Materials Science, Multidisciplinary
Shinji Nakagomi et al.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
(2017)
Article
Physics, Applied
Tatsuro Watahiki et al.
APPLIED PHYSICS LETTERS
(2017)
Article
Nanoscience & Nanotechnology
Kelvin H. L. Zhang et al.
ACS APPLIED MATERIALS & INTERFACES
(2017)
Article
Physics, Applied
Yoshihiro Kokubun et al.
APPLIED PHYSICS EXPRESS
(2016)
Review
Physics, Applied
Marius Grundmann et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2016)
Article
Materials Science, Multidisciplinary
Masataka Higashiwaki et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
(2014)
Article
Materials Science, Coatings & Films
Wei-Luen Jang et al.
SURFACE & COATINGS TECHNOLOGY
(2008)
Article
Crystallography
EG Víllora et al.
JOURNAL OF CRYSTAL GROWTH
(2004)
