Characterizing HfO2-Based Ferroelectric Tunnel Junction in Cryogenic Temperature

Article Engineering, Electrical & Electronic

Optimizing Ferroelectric and Interface Layers in HZO-Based FTJs for Neuromorphic Applications

Ayse Suenbuel et al.

Summary: This article investigates the characteristics and performance of zirconium-doped hafnium oxide-based ferroelectric tunnel junction (FTJ) devices in terms of ferroelectric (FE) switching and reliability. The switching characteristics of FTJ memory, the effects of polarization switching on write conditions, and the impact of pulse width and amplitude on switching are studied. The results show that the maximum FTJ I-ON/I-OFF ratio and reliable performance can be achieved by tuning the stack structure and FE layer thickness.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2022)

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Review Engineering, Electrical & Electronic

Ferroelectric-based synapses and neurons for neuromorphic computing

Erika Covi et al.

Summary: The shift towards distributed computing presents challenges, especially in edge computing. Spiking neural networks (SNNs) and ferroelectric technology offer promising solutions to meet the requirements of edge computing systems.

NEUROMORPHIC COMPUTING AND ENGINEERING (2022)

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Article Engineering, Electrical & Electronic

Bilayer-Based Antiferroelectric HfZrO2 Tunneling Junction With High Tunneling Electroresistance and Multilevel Nonvolatile Memory

K-Y Hsiang et al.

Summary: The bilayer-based Antiferroelectric Tunneling Junction (AFTJ) utilizing ferroelectric and dielectric materials demonstrates exceptional performance in terms of current ratio, TER, retention time, and cycling endurance, making it a promising candidate for low-power crossbar eNVM applications.

IEEE ELECTRON DEVICE LETTERS (2021)

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Article Engineering, Electrical & Electronic

CMOS-Compatible Fabrication of Low-Power Ferroelectric Tunnel Junction for Neural Network Applications

Yi-Shan Kuo et al.

Summary: A low-cost fabrication process for Hf1-xZrxO2 (HZO) nonvolatile memory (NVM) was proposed, and a ferroelectric tunnel junction (FTJ) device with tunable conductance for neural network applications was successfully fabricated. The FTJ device exhibits excellent performances and has high potential to be an ideal emerging memory for neuromorphic computing.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2021)

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Article Nanoscience & Nanotechnology

Low-Temperature Tunneling Electroresistance in Ferromagnetic Metal/Ferroelectric/Semiconductor Tunnel Junctions

Liming Chen et al.

Summary: This study investigates the influence of quantum interference effects on tunneling electroresistance in La0.7Sr0.3MnO3/BaTiO3/Nb:SrTiO3 FTJs at low temperatures. It is found that the ON/OFF current ratio can be significantly enhanced by manipulating the ferroelectric polarization effect.

ACS APPLIED MATERIALS & INTERFACES (2021)

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Article Computer Science, Hardware & Architecture

Characterizing Ferroelectric Properties of Hf0.5Zr0.5O2 From Deep-Cryogenic Temperature (4 K) to 400 K

Jae Hur et al.

Summary: In this study, the reliability effects of Hf-0.5Zr0.5O2 thin film were comprehensively characterized from 4K to 400K, showing one of the highest endurance cycles >3.5 x 10(10) among reported TiN/HZO/TiN capacitors, without wake-up/fatigue effects or retention degradation observed at 4K. Based on experimental results, simulations were further conducted to evaluate the potentials of FeRAM and FeFET as cryogenic memories.

IEEE JOURNAL ON EXPLORATORY SOLID-STATE COMPUTATIONAL DEVICES AND CIRCUITS (2021)

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Article Nanoscience & Nanotechnology