Electrostatic Engineering of β-Ga2O3 Trench Metal-Insulator-Semiconductor Schottky Barrier Diodes Using a Bilayer Dielectric Stack

We predict improved electrostatic fields in a beta-Ga2O3 trench metal-insulator-semiconductor (MIS) Schottky barrier diode (SBD) by integrating a bilayer dielectric as the insulator layer. The bilayer leverages the benefits offered by a high-K/low-Kdielectric arrangement to obtain lower gate leakage as well as alleviated peak fields compared with a stand-alone dielectric insulator. Through detailed 2-D simulations of geometrically optimized MIS trench SBDs, electrostatic engineering of the bilayer dielectric device is performed to predict better breakdown characteristics and the initiation of impact ionization, which is a measure of the intrinsic capability of the material, at comparatively higher doping of the drift layer, as well as a higher power figure-of-merit (FoM; approximate to 4 GW/cm(2)) compared with single-layer dielectric insulators.

Automated summary

In this study, we have predicted improved electrostatic fields in a beta-Ga2O3 trench MIS SBD by using a bilayer dielectric as the insulator layer. This design leads to better breakdown characteristics and a higher power figure-of-merit compared with single-layer dielectric insulators.