Solution Processed ITO/ZnO QDs/TIPS-Pentacene/MoOx High-Performance UV-Visible Photodetector

This letter reports a TIPS-Pentacene (TIPS-P) based ultraviolet-visible (UV-Vis) photodetector using zinc oxide (ZnO) colloidal quantum dots (CQD) (of an average size of similar to 2.00 nm) layer as the electron transport layer (ETL)-cum-UV absorption region and a MoOx layer for the hole transport layer (HTL). The overall device structure is ITO/ZnO CQDs/TIPS-P/MoOx/Ag where indium tin oxide (ITO)-coated glass is the substrate and Ag is the anode contact of the device. ZnO CQDs and TIPS-P layers are grown by spin coating method while the MoOx layer and Ag contact electrode are grown by thermal evaporation method. Under -1 V reverse bias voltage, the photoresponse of the proposed device gives the maximum responsivity (R) of similar to 217.24 A/W, detectivity (D) of similar to 6.79x10(12) cmHz(1/2)/W and external quantum efficiency (EQE) of 69811.93 % at 386 nm incident light of 46 mu W/cm(2) intensity while R similar to 57.34 A/W, D similar to 1.79x10(1) cmHz(1/2)/W and EQE similar to 11111.3 % were obtained at 640 nm incident light of 48.8 mu W/cm(2) intensity.

Automated summary

This study reports a TIPS-Pentacene based UV-Vis photodetector utilizing a layer of zinc oxide colloidal quantum dots as the electron transport layer and UV absorption region, and a MoOx layer as the hole transport layer. The device demonstrates high responsivity, detectivity, and external quantum efficiency under different incident light wavelengths.