期刊
IEEE ELECTRON DEVICE LETTERS
卷 43, 期 8, 页码 1247-1250出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2022.3183840
关键词
Logic gates; Thin film transistors; Photoconductivity; Lighting; Indium tin oxide; Semiconductor device measurement; Pulse measurements; Amorphous-InZnO; thin-film transistors (TFTs); dynamic photo-response current; persistent photoconduction
资金
- Shenzhen Thin Film Transistor (TFT) and Advanced Display Laboratory
- Shenzhen Municipal Scientific Program [JCYJ20180504165449640, JCYJ20200109140610435, SGDX20201103095610029]
- Basic and Applied Basic Research Foundation of Guangdong Province [2020A1515110264]
Amorphous InZnO (a-IZO) thin film transistors (TFT) exhibit high sensitivity to green or shorter wavelength light and can be used as photosensors. However, the persistent photoconduction (PPC) phenomenon in a-IZO TFT limits its application as a photosensor, resulting in severe threshold voltage shift and low response speed. By employing a dual-gate transistor architecture and dual-gate pulses configuration, the PPC of a-IZO TFT is completely eliminated.
Amorphous InZnO (a-IZO) thin film transistors (TFT) are highly sensitive to green or shorter wavelength light, and can be applied as photosensors. Nonetheless, the application of a-IZO TFT as photosensor is hindered by its persistent photoconduction (PPC), which leads to severe threshold voltage shift and low response speed. Here, we show that the PPC in the a-IZO TFT cannot be thoroughly eliminated by single-gate positive pulses. The residual ionized oxygen vacancy (Vo(2+)) per gate pulse would gradually accumulate over time, giving rise to an increment of PPC under long-term illumination. To tackle this issue, a dual-gate transistor architecture together with dual-gate pulses configuration is proposed. Due to a stronger gate controllability, the residual Vo(2+) that lie in the middle of the IZO channel is reduced, and the PPC of a-IZO TFT is thoroughly eliminated.
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