期刊
IEEE ELECTRON DEVICE LETTERS
卷 43, 期 10, 页码 1728-1731出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2022.3195877
关键词
Sensors; Magnetic sensors; Resistance; Magnetic fields; Sensitivity; Magnetic field measurement; Current measurement; Epitaxial thin films; anomalous hall effect; magnetic sensor; multifunctional device
This study discovers that the anomalous hall sensor based on NiCo2O4 thin film has controllable sensitivity and linear range, which can be adjusted by current. The device has a simple structure, interesting anomalous hall signal, and exhibits memory switching characteristic controlled by magnetic field.
Multi-functional magnetic sensors with tunable measure range can help cover different requirements from detecting weak field to sensing strong field. However, additional control system is often required to realize the tunability, which increases the complexity of device. In this work, we found the current controlled sensitivity and linear range in the NiCo2O4 thin film based anomalous hall sensor. The device owns not only simple structure but also interesting anomalous hall signal whose linearity range and sensitivity can be controlled by current. Ultrahigh sensitivity of 4900 V/(AT) in the range of +/- 0.2 mT and competitive sensitivity of 20 V/(AT) in the range of +/- 23 mT are simultaneously realized by tunning the work current. In addition, a memory switching characteristic controlled by magnetic field is further found in the device. These results show that the anomalous hall device has the potential for multifunctional compact device.
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