相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。Characterization of Dynamic Threshold Voltage in Schottky-Type p-GaN Gate HEMT Under High-Frequency Switching
Kailun Zhong et al.
IEEE ELECTRON DEVICE LETTERS (2021)
Incorporating the Dynamic Threshold Voltage Into the SPICE Model of Schottky-Type p-GaN Gate Power HEMTs
Han Xu et al.
IEEE TRANSACTIONS ON POWER ELECTRONICS (2021)
OFF-State Drain-Voltage-Stress-Induced VTH Instability in Schottky-Type p-GaN Gate HEMTs
Junting Chen et al.
IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS (2021)
p-GaN Gate HEMT With Surface Reinforcement for Enhanced Gate Reliability
Li Zhang et al.
IEEE ELECTRON DEVICE LETTERS (2021)
Identification of Trap States in p-GaN Layer of a p-GaN/AlGaN/GaN Power HEMT Structure by Deep-Level Transient Spectroscopy
Song Yang et al.
IEEE ELECTRON DEVICE LETTERS (2020)
Characterization and analysis of low-temperature time-to-failure behavior in forward-biased Schottky-type p-GaN gate HEMTs
Jiabei He et al.
APPLIED PHYSICS LETTERS (2020)
Planar GaN Power Integration - The World is Flat
Kevin J. Chen et al.
2020 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) (2020)
Charge Storage Mechanism of Drain Induced Dynamic Threshold Voltage Shift in p-GaN Gate HEMTs
Jin Wei et al.
IEEE ELECTRON DEVICE LETTERS (2019)
Understanding the Threshold Voltage Instability During OFF-State Stress in p-GaN HEMTs
Loizos Efthymiou et al.
IEEE ELECTRON DEVICE LETTERS (2019)
Frequency- and Temperature-Dependent Gate Reliability of Schottky-Type p-GaN Gate HEMTs
Jiabei He et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2019)
Review of technology for normally-off HEMTs with p-GaN gate
Giuseppe Greco et al.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2018)
Gate Conduction Mechanisms and Lifetime Modeling of p-Gate AlGaN/GaN High-Electron-Mobility Transistors
Arno Stockman et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2018)
GaN-on-Si Power Technology: Devices and Applications
Kevin J. Chen et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2017)
Maximizing the Performance of 650-V p-GaN Gate HEMTs: Dynamic RON Characterization and Circuit Design Considerations
Hanxing Wang et al.
IEEE TRANSACTIONS ON POWER ELECTRONICS (2017)
Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate
Isabella Rossetto et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2016)
Dynamic Performance of AlN-Passivated AlGaN/GaNMIS- High Electron Mobility Transistors Under Hard Switching Operation
Hanxing Wang et al.
IEEE ELECTRON DEVICE LETTERS (2015)
Determination of carrier diffusion length in GaN
Shopan Hafiz et al.
JOURNAL OF APPLIED PHYSICS (2015)
Evaluation and Application of 600 V GaN HEMT in Cascode Structure
Xiucheng Huang et al.
IEEE TRANSACTIONS ON POWER ELECTRONICS (2014)
Impact of Channel Hot Electrons on Current Collapse in AlGaN/GaN HEMTs
Injun Hwang et al.
IEEE ELECTRON DEVICE LETTERS (2013)
p-GaN Gate HEMTs With Tungsten Gate Metal for High Threshold Voltage and Low Gate Current
Injun Hwang et al.
IEEE ELECTRON DEVICE LETTERS (2013)
Enhancement-mode AlGaN/GaN HEMT and MIS-HEMT technology
Kevin J. Chen et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2011)
AlGaN/GaN recessed MIS-gate HFET with high-threshold-voltage normally-off operation for power electronics applications
Tohru Oka et al.
IEEE ELECTRON DEVICE LETTERS (2008)
Gate injection transistor (GIT) - A normally-off AlGaN/GaN power transistor using conductivity modulation
Yasuhiro Uemoto et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2007)
Minority carrier diffusion length in GaN: Dislocation density and doping concentration dependence
K Kumakura et al.
APPLIED PHYSICS LETTERS (2005)
分享论文
