期刊
DIAMOND AND RELATED MATERIALS
卷 129, 期 -, 页码 -出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.diamond.2022.109340
关键词
Single -crystal diamond; MEMS; Micro cantilever; Pressure; Energy dissipation
类别
资金
- JSPS KAKENHI [20H02212, 22K18957]
- JSPS Japan [JPJSBP120227203]
- Chinese Academy of Sciences, China [JPJSBP120227203]
- Murata Science Foundation
- Iketani Science and Technology Foundation
- Tsukuba Global Innovation Promotion Agency
- Nanotechnology Platform projects - Ministry of Education, Culture, Sports, Science and Technology (MEXT) of Japan
In this study, we investigated the effect of ambient gas pressure on the quality factor of single-crystal diamond micro cantilevers. The results show that the quality factor remains stable at low pressures but decreases significantly as the pressure increases.
Single-crystal diamond (SCD) is a prominent semiconductor material due to its superior mechanical and physical properties. From the viewpoint of practical application, a low vacuum or atmospheric environment are preferred. Here we systematically investigated the effect of ambient gas pressure on the quality-factor (Q-factor) of SCD micro cantilevers, and analyzed the disparate energy dissipation mechanisms. The Q-factor around 7500 was found to be almost stable for ambient pressure <10 Pa, then decreased sharply by about three orders of magnitude with the pressure increasing up to 105 Pa gradually. The ambient pressure ranging from 10-3 to 105 Pa can be defined as intrinsic, molecular, and viscous regimes by Knudsen number. We found that the Q-factors of the SCD cantilevers can be well described by the analytical models corresponding to the three regimes.
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