Giant effective g factor and anisotropy in Sn1-xEuxTe: Contribution from spin-orbit and s/p - f hybridization

We consider the effective equation of motion starting from the fundamental six-level double group basis as stated by Mitchell-Wallis under effective mass representation in the presence of spin-orbit interaction, external magnetic field, and impurity. Here, the hybridized exchange type interactions due to magnetic impurities with carrier and external magnetic field are incorporated in the (k) over right arrow.(pi) over right arrow perturbation technique. Finally, we perform a systematic analysis of the effective g factor and its anisotropy in Sn1-xEuxTe as functions of carrier concentration and impurity at T = 300 K. We report very high values of effective g factor; g = 1028 for n-Sn1-xEuxTe and g = 997 for p-Sn1-xEuxTe with large anisotropies around x = 0.02 as compared to Pb1-xEuxTe in the concentration range 0.01 x 10(19)cm(-3) to 0.1 x 10(19)cm(-3). Our calculated results and trends are very similar to others' work, previously reported for similar systems. The presence of a large effective g factor renders this material a potential choice for spintronics applications.

Automated summary

In this study, we investigate the effective equation of motion for Sn1-xEuxTe material using the effective mass representation based on the fundamental six-level double group basis. The analysis takes into account the spin-orbit interaction, external magnetic field, and impurity effects. Our results show that the material exhibits a very high effective g factor with significant anisotropy in a specific concentration range, making it a potential candidate for spintronics applications.