期刊
CORROSION SCIENCE
卷 207, 期 -, 页码 -出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.corsci.2022.110552
关键词
SiBCN-Ta4HfC5; Oxidation kinetics; Oxide layer; Evolutionary process
资金
- National Natural Science Foundation of China [52002092, 52172068, 51832002]
- Heilong Jiang Natural Science Fund for Young Scholars [YQ2021E017]
- National Key Research and Development Program [2017YFB0703200, 2017YFB0310400]
- Heilongjiang Touyan Team Program
This study explores the morphological/microstructural evolution and oxidation behavior of SiBCN-Ta4HfC5 ceramics at high temperature, and reveals the oxidation kinetic mechanisms. The research findings show that the excellent oxidation resistance of SiBCN-Ta4HfC5 is due to the formation of a dense oxide layer.
In this study, the morphological/microstructural evolution and oxidation behavior of SiBCN-Ta4HfC5 ceramics at 1600 ? were explored and the oxidation kinetic mechanisms were revealed. The results show that the distribution form of tantalum hafnium oxide changes from aggregation distribution in the form of particles to annular distribution along the SiO2 boundary. Oxidation kinetic constant of SiBCN-Ta4HfC5 is 215.97 mu m(2)/h, while pure SiBCN is k(p) = 1267.70 mu m(2)/h. The excellent oxidation resistance of SiBCN-Ta4HfC5 is mainly attributed to the forming dense oxide layer, which effectively hinders the oxygen diffusion inward.
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