相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。General Model for Defect Dynamics in Ionizing-Irradiated SiO2-Si Structures
Yu Song et al.
SMALL (2022)
Silicon electro-optic micro-modulator fabricated in standard CMOS technology as components for all silicon monolithic integrated optoelectronic systems*
Kaikai Xu
JOURNAL OF MICROMECHANICS AND MICROENGINEERING (2021)
ENHANCED LOW DOSE RATE SENSITIVITY (ELDRS) AND REDUCED LOW DOSE RATE SENSITIVITY (RLDRS) IN BIPOLAR DEVICES.
Vyacheslav S. Pershenkov et al.
FACTA UNIVERSITATIS-SERIES ELECTRONICS AND ENERGETICS (2020)
An overview of radiation effects on electronic devices under severe accident conditions in NPPs, rad-hardened design techniques and simulation tools
Qiang Huang et al.
PROGRESS IN NUCLEAR ENERGY (2019)
Optoelectronic properties analysis of silicon light-emitting diode monolithically integrated in standard CMOS IC
Yanxu Chen et al.
CHINESE PHYSICS B (2019)
A Multi-Time-Step Finite Element Algorithm for 3-D Simulation of Coupled Drift-Diffusion Reaction Process in Total Ionizing Dose Effect
Jingjie Xu et al.
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING (2018)
Analysis of Total Ionizing Dose effects for highly scaled CMOS devices in Low Earth Orbit
Muhammad Sajid et al.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS (2018)
Three-dimensional Finite Elements Method simulation of Total Ionizing Dose in 22 nm bulk nFinFETs
Eleni Chatzikyriakou et al.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS (2017)
The effect of interface trapped charge on threshold voltage shift estimation for gamma irradiated MOS device
H. Jafari et al.
RADIATION MEASUREMENTS (2015)
Efficient time integration in dislocation dynamics
Ryan B. Sills et al.
MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING (2014)
Radiation Effects in Power Systems: A Review
P. C. Adell et al.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2013)
Radiation-Induced Oxide Charge in Low- and High-H2 Environments
Nicole L. Rowsey et al.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2012)
Modeling Low Dose Rate Effects in Shallow Trench Isolation Oxides
Ivan S. Esqueda et al.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2011)
A Quantitative Model for ELDRS and H2 Degradation Effects in Irradiated Oxides Based on First Principles Calculations
Nicole L. Rowsey et al.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2011)
Modeling Ionizing Radiation Effects in Solid State Materials and CMOS Devices
Hugh J. Barnaby et al.
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS (2009)
Modeling the Dose Rate Response and the Effects of Hydrogen in Bipolar Technologies
X. Jie Chen et al.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2009)
Vacancy-related defects and the Eδ' center in amorphous silicon dioxide: Density functional calculations
Blair R. Tuttle et al.
PHYSICAL REVIEW B (2009)
The Effects of Hydrogen on the Enhanced Low Dose Rate Sensitivity (ELDRS) of Bipolar Linear Circuits
Ronald L. Pease et al.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2008)
Radiation Effects in MOS Oxides
James R. Schwank et al.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2008)
Mechanisms of enhanced radiation-induced degradation due to excess molecular hydrogen in bipolar oxides
X. J. Chen et al.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2007)
Physics-based simulation of single-event effects
PE Dodd
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY (2005)
Total ionizing dose and displacement-damage effects in microelectronics
CC Foster
MRS BULLETIN (2003)
Structure, properties, and dynamics of oxygen vacancies in amorphous SiO2 -: art. no. 285505
ZY Lu et al.
PHYSICAL REVIEW LETTERS (2002)
Defect generation by hydrogen at the Si-SiO2 interface -: art. no. 165506
SN Rashkeev et al.
PHYSICAL REVIEW LETTERS (2001)
First-principles calculations of defects in oxygen-deficient silica exposed to hydrogen
PE Blöchl
PHYSICAL REVIEW B (2000)
分享论文
