4.7 Article

Enhancing the electronic properties of VLS-grown silicon nanowires by surface charge transfer

期刊

APPLIED SURFACE SCIENCE
卷 599, 期 -, 页码 -

出版社

ELSEVIER
DOI: 10.1016/j.apsusc.2022.153957

关键词

Non-equilibrium reactions; Silicon nanowire; Surface chemistry; Surface Fermi level; Sub-oxides; DFT; Work function; Charge transfer

资金

  1. Ben-Gurion University of the Negev
  2. TZIN Scholarship
  3. Jacob Blaustein Center for Scientific Cooperation
  4. EU's Horizon 2020 research and innovation programme [824158]
  5. Generalitat de Catalunya [2017 SGR 327]
  6. Severo Ochoa program of Spanish MINECO [SEV-2017-0706]
  7. CERCA Programme/Generalitat de Catalunya

向作者/读者索取更多资源

The need to develop new energy storage technology has led to a deeper investigation into materials science, focusing on the use of silicon nanowires as energy storage material. The study emphasizes the significance of redox potential and work function in the charging and discharging process of batteries. By modifying the surface electronic properties of silicon nanowires, higher stability and efficiency can be achieved.
The need to develop new energy storage technology has led to deeper investigation into materials science to produce highly efficient batteries, primarily the lithium ion battery. The importance of electrodes in such devices has led to the reemergence of silicon nanowires (Si NWs) at the forefront of materials study-in this context, as an energy storage material (as electrodes). Redox potential and work function play the most important roles in charge transfer, the battery charging/discharging process. Thus, the NWs' interfacial properties become important in achieving higher stability and efficiency. In this work, a deep study was conducted using equilibrium perturbation to change the surface electronic properties of Si NWs, which can be integrated into various technologies, while simultaneously achieving an interesting interface that is chemically passive and cheap to produce. By using an X-ray photoelectron spectroscope, a Kelvin probe, and contact angle measurement, combined with theoretical analysis, a full picture is achieved regarding the Si NWs' interface, paving the way for this new technique to develop unique interfaces and to achieve a higher energy capacity and a longer lifetime.

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