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Emanuel Carlos et al.
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Zhenhan Zhang et al.
INFOMAT (2020)
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June Park et al.
ACS APPLIED MATERIALS & INTERFACES (2019)
Impact of the precursor chemistry and process conditions on the cell-to-cell variability in 1T-1R based HfO2 RRAM devices
Alessandro Grossi et al.
SCIENTIFIC REPORTS (2018)
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Mohammed A. Zidan et al.
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Influence of Thermal Annealing Treatment on Bipolar Switching Properties of Vanadium Oxide Thin-Film Resistance Random-Access Memory Devices
Kai-Huang Chen et al.
JOURNAL OF ELECTRONIC MATERIALS (2017)
Growth of HfO2/TiO2 nanolaminates by atomic layer deposition and HfO2-TiO2 by atomic partial layer deposition
H. Hernandez-Arriaga et al.
JOURNAL OF APPLIED PHYSICS (2017)
Resistive Switching Performance Improvement via Modulating Nanoscale Conductive Filament, Involving the Application of Two-Dimensional Layered Materials
Yu Li et al.
SMALL (2017)
Effect of nitrogen incorporation into Al-based gate insulators in AlON/AlGaN/GaN metal-oxide-semiconductor structures
Ryohei Asahara et al.
APPLIED PHYSICS EXPRESS (2016)
First-principles thermodynamics and defect kinetics guidelines for engineering a tailored RRAM device
Sergiu Clima et al.
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Resistive switching memories based on metal oxides: mechanisms, reliability and scaling
Daniele Ielmini
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2016)
Oxygen vacancy effects in HfO2 - based resistive switching memory: First principle study
Yuehua Dai et al.
AIP ADVANCES (2016)
Temperature induced complementary switching in titanium oxide resistive random access memory
D. Panda et al.
AIP ADVANCES (2016)
Impact of Post-Oxide Deposition Annealing on Resistive Switching in HfO2-Based Oxide RRAM and Conductive-Bridge RAM Devices
Tsung-Ling Tsai et al.
IEEE ELECTRON DEVICE LETTERS (2015)
Forming-Free TaOx Based RRAM Device with Low Operating Voltage and High On/Off Characteristics
Y. Jiang et al.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2015)
Effect of Nitrogen Doping on Variability of TaOx -RRAM for Low-Power 3-Bit MLC Applications
Saiful Haque Misha et al.
ECS SOLID STATE LETTERS (2015)
Three-Dimensional Observation of the Conductive Filament in Nanoscaled Resistive Memory Devices
Umberto Celano et al.
NANO LETTERS (2014)
Nanoelectronic Programmable Synapses Based on Phase Change Materials for Brain-Inspired Computing
Duygu Kuzum et al.
NANO LETTERS (2012)
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Andre Chanthbouala et al.
NATURE MATERIALS (2012)
Metal-Oxide RRAM
H. -S. Philip Wong et al.
PROCEEDINGS OF THE IEEE (2012)
Nonvolatile resistive switching memories-characteristics, mechanisms and challenges
Feng PAN et al.
Progress in Natural Science-Materials International (2012)
Emerging memories: resistive switching mechanisms and current status
Doo Seok Jeong et al.
REPORTS ON PROGRESS IN PHYSICS (2012)
Effect of nitrogen on structural stability of bismuth doped GeTe films under thermal treatment
Ki-Hong Kim et al.
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Approaches for improving the performance of filament-type resistive switching memory
Lian WenTai et al.
CHINESE SCIENCE BULLETIN (2011)
Annealing temperature dependent oxygen vacancy behavior in SnO2 thin films fabricated by pulsed laser deposition
C. Ke et al.
CURRENT APPLIED PHYSICS (2011)
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Yu-Sheng Chen et al.
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Shimeng Yu et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2011)
Metal oxide resistive memory switching mechanism based on conductive filament properties
G. Bersuker et al.
JOURNAL OF APPLIED PHYSICS (2011)
Low-Power and Nanosecond Switching in Robust Hafnium Oxide Resistive Memory With a Thin Ti Cap
H. Y. Lee et al.
IEEE ELECTRON DEVICE LETTERS (2010)
Effects of metal electrodes on the resistive memory switching property of NiO thin films
C. B. Lee et al.
APPLIED PHYSICS LETTERS (2008)
Resistive switching in transition metal oxides
Akihito Sawa
MATERIALS TODAY (2008)
Spin-transfer torque switching in magnetic tunnel junctions and spin-transfer torque random access memory
Zhitao Diao et al.
JOURNAL OF PHYSICS-CONDENSED MATTER (2007)
Current transport in metal/hafnium oxide/silicon structure
WJ Zhu et al.
IEEE ELECTRON DEVICE LETTERS (2002)
High-κ gate dielectrics:: Current status and materials properties considerations
GD Wilk et al.
JOURNAL OF APPLIED PHYSICS (2001)