期刊
APPLIED SURFACE SCIENCE
卷 603, 期 -, 页码 -出版社
ELSEVIER
DOI: 10.1016/j.apsusc.2022.154307
关键词
Memristor; Thermal stability; Resistive random access memory (RRAM); Oxygen vacancy; Post metal annealing; Nitrogen doping
类别
资金
- Basic Science Research Program within the Ministry of Science, ICT, and Future Planning through the National Research Foundation of Korea [2020R1A2C2004029]
- National Research Foundation of Korea (NRF) - Ministry of Science and ICT for Original Technology Program [2020M3F3A2A01082329]
In this study, a thermally stable memristor with nitrogen-doped hafnium oxide as an active layer is proposed, which exhibits normal operation even under high temperature conditions.
In this study, we propose a thermally stable memristor with nitrogen-doped hafnium oxide (HfO:N)-based resistive switching (RS) memory. The memristor with HfO:N as an active layer showed only a 7% change in the resistance in the high resistance state (HRS) after post-metal annealing (PMA) at 400 & DEG;C for 1 h. In contrast, the HfO2-based memristor exhibited an 83% change in the resistance at HRS after PMA at 400 & DEG;C for 1 h and lost RS operating characteristics after PMA over 400 & DEG;C. In addition, although the resistance of the HRS decreased by 80% after PMA at 550 & DEG;C for 1 h, the HfO:N-based memristor showed that the RS operation was maintained up to 550 & DEG;C. Through the nitrogen doping technique, a thermal budget of 550 & DEG;C can be achieved, which is one of the highest thermal budgets in RS memory with PMA. Such thermal stability enhancement of the memristor is a result of nitrogen doping, which improves the structural stability of the active layer and suppresses the gener-ation of oxygen vacancies in the active layer. This experimental approach can facilitate the development of advanced memristor devices with a good thermal budget of up to 550 & DEG;C.
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