期刊
APPLIED PHYSICS LETTERS
卷 121, 期 18, 页码 -出版社
AIP Publishing
DOI: 10.1063/5.0116968
关键词
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资金
- JSPS KAKENHI
- Iketani Science and Technology Foundation
- [22H01757]
- [22K18903]
The experimental investigation found that the increase in the lattice strain of the Pt buffer layer thickness led to an increase in the Neel temperature (T-N) of the 10-nm thick Cr2O3(0001) thin films. The T-N value increased from 241.5 to 260.0 K with the variation of the Pt buffer layer thickness. The T-N value was weakly correlated with the axial ratio c/a and the lattice volume of the Cr2O3 layer V, increasing with decreasing c/a or increasing V.
Increase in the Neel temperature (T-N) of the 10-nm thick Cr2O3(0001) thin films by the lattice strain was experimentally investigated. T-N was determined based on the zero-offset anomalous Hall measurements for the Pt/Cr2O3/Pt epitaxial trilayer. The lattice strain was altered by the Pt buffer layer thickness and was evaluated by the lattice parameters. T-N was increased from 241.5 to 260.0 K by varying the Pt buffer layer thickness from 0 to 20 nm. For the film without the Pt buffer layer, the apparent critical exponent near T-N increased suggesting the distribution of T-N due to the inhomogeneous strain. The T-N value was weakly correlated with the axial ratio c/a and the lattice volume of the Cr2O3 layer V; T-N increases with decreasing c/a or increasing V. The increase in T-N by the reduction in c/a (or by increasing V) implies that the exchange coupling between the nearest neighbor Cr3+ spins has the significant role in the strain effect. published under an exclusive license by AIP Publishing.
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