相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Disorder-Induced Ordering in Gallium Oxide Polymorphs
Alexander Azarov et al.
PHYSICAL REVIEW LETTERS (2022)
β-Gallium oxide power electronics
Andrew J. Green et al.
APL MATERIALS (2022)
Radiation-induced defect accumulation and annealing in Si-implanted gallium oxide
S. B. Kjeldby et al.
JOURNAL OF APPLIED PHYSICS (2022)
Disordering of β-Ga2O3 upon irradiation with Si+ ions: Effect of surface orientation
Vladimir Trushin et al.
MATERIALS LETTERS (2022)
Homoepitaxial β-Ga2O3 transparent conducting oxide with conductivity σ=2323 S cm-1
Hyung Min Jeon et al.
APL MATERIALS (2021)
Ion implantation in β-Ga2O3: Physics and technology
Alena Nikolskaya et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2021)
γ-phase inclusions as common structural defects in alloyed β-(AlxGa1-x)2O3 and doped β-Ga2O3 films
Celesta S. Chang et al.
APL MATERIALS (2021)
Dominating migration barrier for intrinsic defects in gallium oxide: Dose-rate effect measurements
Alexander Azarov et al.
APPLIED PHYSICS LETTERS (2021)
β-Gallium Oxide Devices: Progress and Outlook
Masataka Higashiwaki
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS (2021)
Enhancement-Mode β-Ga2O3 Current Aperture Vertical MOSFETs With N-Ion-Implanted Blocker
Man Hoi Wong et al.
IEEE ELECTRON DEVICE LETTERS (2020)
Hydrogen induced vacancy clustering and void formation mechanisms at grain boundaries in palladium
Jonathan M. Polfus et al.
ACTA MATERIALIA (2020)
Field-Plated Lateral Ga2O3 MOSFETs With Polymer Passivation and 8.03 kV Breakdown Voltage
Shivam Sharma et al.
IEEE ELECTRON DEVICE LETTERS (2020)
Structural transition and recovery of Ge implanted β-Ga2O3
Elaf A. Anber et al.
APPLIED PHYSICS LETTERS (2020)
First-principles surface energies for monoclinic Ga2O3 and Al2O3 and consequences for cracking of (AlxGa1-x)2O3
Sai Mu et al.
APL MATERIALS (2020)
Mg acceptor doping in MOCVD (010) β-Ga2O3
Zixuan Feng et al.
APPLIED PHYSICS LETTERS (2020)
Sn doping of (010) β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy
Akhil Mauze et al.
APPLIED PHYSICS LETTERS (2020)
Formation of N2 bubbles along grain boundaries in (ZnO)1-x(GaN)x: nanoscale STEM-EELS studies
Calliope Bazioti et al.
PHYSICAL CHEMISTRY CHEMICAL PHYSICS (2020)
Gadolinium-implanted GaN studied by spin-polarized positron annihilation spectroscopy
M. Maekawa et al.
PHYSICAL REVIEW B (2020)
Density functional tight binding study of β-Ga2O3: Electronic structure, surface energy, and native point defects
Jonghoon Lee et al.
JOURNAL OF CHEMICAL PHYSICS (2019)
High Aspect Ratio β-Ga2O3 Fin Arrays with Low-Interface Charge Density by Inverse Metal-Assisted Chemical Etching
Hsien-Chih Huang et al.
ACS NANO (2019)
A field-plated Ga2O3 MOSFET with near 2-kV breakdown voltage and 520 mΩ . cm2 on-resistance
Ke Zeng et al.
APPLIED PHYSICS EXPRESS (2019)
β-Ga2O3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz
Zhanbo Xia et al.
IEEE ELECTRON DEVICE LETTERS (2019)
The role of annealing ambient on diffusion of implanted Si in β-Ga2O3
Ribhu Sharma et al.
AIP ADVANCES (2019)
Mechanism of Si doping in plasma assisted MBE growth of β-Ga2O3
Nidhin Kurian Kalarickal et al.
APPLIED PHYSICS LETTERS (2019)
Diffusion of implanted Ge and Sn in β-Ga2O3
Ribhu Sharma et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2019)
Damage Recovery and Dopant Diffusion in Si and Sn Ion Implanted β-Ga2O3
Marko J. Tadjer et al.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2019)
Delta Doped beta-Ga2O3 Field Effect Transistors With Regrown Ohmic Contacts
Zhanbo Xia et al.
IEEE ELECTRON DEVICE LETTERS (2018)
Guest Editorial: The dawn of gallium oxide microelectronics
Masataka Higashiwaki et al.
APPLIED PHYSICS LETTERS (2018)
2300V Reverse Breakdown Voltage Ga2O3 Schottky Rectifiers
Jiancheng Yang et al.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2018)
A review of Ga2O3 materials, processing, and devices
S. J. Pearton et al.
APPLIED PHYSICS REVIEWS (2018)
Defect phase diagram for doping of Ga2O3
Stephan Lany
APL MATERIALS (2018)
Acceptor doping of beta-Ga2O3 by Mg and N ion implantations
Man Hoi Wong et al.
APPLIED PHYSICS LETTERS (2018)
1.85 kV Breakdown Voltage in Lateral Field-Plated Ga2O3 MOSFETs
Ke Zeng et al.
IEEE ELECTRON DEVICE LETTERS (2018)
The Figure of Merit of a Semiconductor Power Electronics Switch
Krishna Shenai
IEEE TRANSACTIONS ON ELECTRON DEVICES (2018)
Selective area isolation of beta-Ga2O3 using multiple energy nitrogen ion implantation
Kornelius Tetzner et al.
APPLIED PHYSICS LETTERS (2018)
1230 V β-Ga2O3 trench Schottky barrier diodes with an ultra-low leakage current of <1 μA/cm2
Wenshen Li et al.
APPLIED PHYSICS LETTERS (2018)
Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS
S. J. Pearton et al.
JOURNAL OF APPLIED PHYSICS (2018)
Scaling-Up of Bulk β-Ga2O3 Single Crystals by the Czochralski Method
Zbigniew Galazka et al.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2017)
Si- and Sn-Doped Homoepitaxial β-Ga2O3 Layers Grown by MOVPE on (010)-Oriented Substrates
Michele Baldini et al.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2017)
β-Ga2O3 MOSFETs for Radio Frequency Operation
Andrew Joseph Green et al.
IEEE ELECTRON DEVICE LETTERS (2017)
Enhancement-mode Ga2O3 MOSFETs with Si-ion-implanted source and drain
Man Hoi Wong et al.
APPLIED PHYSICS EXPRESS (2017)
Ge doping of β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy
Elaheh Ahmadi et al.
APPLIED PHYSICS EXPRESS (2017)
1-kV vertical Ga2O3 field-plated Schottky barrier diodes
Keita Konishi et al.
APPLIED PHYSICS LETTERS (2017)
Homoepitaxial growth of beta gallium oxide films by mist chemical vapor deposition
Sam-dong Lee et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2016)
High-level damage saturation below amorphisation in ion implanted β-Ga2O3
Elke Wendler et al.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS (2016)
Direct Observation of Sr Vacancies in SrTiO3 by Quantitative Scanning Transmission Electron Microscopy
Honggyu Kim et al.
PHYSICAL REVIEW X (2016)
Debye function analysis of nanocrystalline gallium oxide γ-Ga2O3
Olga Nikulina et al.
ZEITSCHRIFT FUR KRISTALLOGRAPHIE-CRYSTALLINE MATERIALS (2016)
Dopant activation in Sn-doped Ga2O3 investigated by X-ray absorption spectroscopy
S. C. Siah et al.
APPLIED PHYSICS LETTERS (2015)
Characterization of Structural Disorder in γ-Ga2O3
Helen. Y. Playford et al.
JOURNAL OF PHYSICAL CHEMISTRY C (2014)
Homoepitaxial growth of beta-Ga2O3 layers by metal-organic vapor phase epitaxy
Guenter Wagner et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2014)
Si-Ion Implantation Doping in β-Ga2O3 and Its Application to Fabrication of Low-Resistance Ohmic Contacts
Kohei Sasaki et al.
APPLIED PHYSICS EXPRESS (2013)
Three-Dimensional Imaging of Individual Dopant Atoms in SrTiO3
Jinwoo Hwang et al.
PHYSICAL REVIEW LETTERS (2013)
Oxygen vacancies and donor impurities in β-Ga2O3
J. B. Varley et al.
APPLIED PHYSICS LETTERS (2010)
Nanocrystals in crystalline silicon: Void formation and hollow particles
A Meldrum et al.
JOURNAL OF MATERIALS RESEARCH (2001)
Ion implantation into GaN
SO Kucheyev et al.
MATERIALS SCIENCE & ENGINEERING R-REPORTS (2001)