4.6 Article

Structural stability of β-Ga2O3 under ion irradiation

相关参考文献

注意:仅列出部分参考文献,下载原文获取全部文献信息。
Article Physics, Multidisciplinary

Disorder-Induced Ordering in Gallium Oxide Polymorphs

Alexander Azarov et al.

Summary: In this study, the phenomenon of polymorphism in gallium oxide is investigated. It is found that the amorphization can be significantly suppressed by the phase transition, leading to the fabrication of a highly oriented single-phase film. A novel mode of lateral polymorphic regrowth, not previously observed in solids, is also discovered. These findings open up new directions for research on polymorphs in Ga2O3 and potentially in other materials.

PHYSICAL REVIEW LETTERS (2022)

Review Chemistry, Physical

Ga2O3 and Related Ultra-Wide Bandgap Power Semiconductor Oxides: New Energy Electronics Solutions for CO2 Emission Mitigation

Zeyu Chi et al.

Summary: This article discusses the importance of efficient electrical power management in achieving climate goals and introduces ultra-wide bandgap (UWBG) semiconductors as a promising technology for energy electronics. Gallium oxide-Ga2O3 and other oxide semiconductors are highlighted for their high-power and optoelectronic properties, which could revolutionize power electronics and contribute to a sustainable zero emission society.

MATERIALS (2022)

Article Materials Science, Multidisciplinary

Comparative study of radiation tolerance of GaN and Ga2O3 polymorphs

A. I. Titov et al.

Summary: The mechanisms of ion-induced defect formation and physical characteristics promoting radiation tolerance of wide and ultra-wide bandgap semiconductors, particularly gallium oxide (Ga2O3), are studied in this paper. The results show that the damage formation in Ga2O3 differs from that in gallium nitride (GaN) and is strongly influenced by the polymorph type. Additionally, the study demonstrates that the metastable alpha-Ga2O3 exhibits higher radiation resistance compared to the thermodynamically stable beta-Ga2O3 polymorph. The surface of the samples and dynamic annealing are also found to play significant roles in the ion-induced damage formation processes.

VACUUM (2022)

Article Physics, Applied

Structural transition and recovery of Ge implanted β-Ga2O3

Elaf A. Anber et al.

APPLIED PHYSICS LETTERS (2020)

Article Chemistry, Multidisciplinary

In situ real-time study buckling behavior of boron nitride nanotubes with axial compression by TEM

Guoxin Chen et al.

CHINESE CHEMICAL LETTERS (2019)

Article Chemistry, Multidisciplinary

Structure model of γ-Al2O3 based on planar defects

Martin Rudolph et al.

Review Materials Science, Multidisciplinary

Radiation damage effects in Ga2O3 materials and devices

Jihyun Kim et al.

JOURNAL OF MATERIALS CHEMISTRY C (2019)

Article Physics, Applied

Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS

S. J. Pearton et al.

JOURNAL OF APPLIED PHYSICS (2018)

Article Chemistry, Physical

First-principles calculations of oxygen interstitials in corundum: a site symmetry approach

Robert A. Evarestov et al.

PHYSICAL CHEMISTRY CHEMICAL PHYSICS (2017)

Article Instruments & Instrumentation

High-level damage saturation below amorphisation in ion implanted β-Ga2O3

Elke Wendler et al.

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS (2016)

Article Multidisciplinary Sciences

Quantification of thickness and wrinkling of exfoliated two-dimensional zeolite nanosheets

Prashant Kumar et al.

NATURE COMMUNICATIONS (2015)

Article Chemistry, Multidisciplinary

Crystallographic Tool Box (CrysTBox): automated tools for transmission electron microscopists and crystallographers

Miloslav Klinger et al.

JOURNAL OF APPLIED CRYSTALLOGRAPHY (2015)

Article Chemistry, Multidisciplinary

VESTA 3 for three-dimensional visualization of crystal, volumetric and morphology data

Koichi Momma et al.

JOURNAL OF APPLIED CRYSTALLOGRAPHY (2011)

Article Physics, Applied

Electrical properties of β-Ga2O3 single crystals grown by the Czochralski method

K. Irmscher et al.

JOURNAL OF APPLIED PHYSICS (2011)

Article Physics, Multidisciplinary

Experimental electronic structure of In2O3 and Ga2O3

Christoph Janowitz et al.

NEW JOURNAL OF PHYSICS (2011)

Article Instruments & Instrumentation

SRIM - The stopping and range of ions in matter (2010)

James F. Ziegler et al.

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS (2010)

Article Physics, Condensed Matter

Structures and energetics of Ga2O3 polymorphs

S. Yoshioka et al.

JOURNAL OF PHYSICS-CONDENSED MATTER (2007)

Article Materials Science, Multidisciplinary

Energetics and migration of point defects in Ga2O3 -: art. no. 184103

MA Blanco et al.

PHYSICAL REVIEW B (2005)