Thermoelectric properties of hole-doped CuRhO2 thin films

Design and realization of high-efficiency p-type thermoelectric materials with excellent performance are the demand for integrated thermoelectric components. Compared with single crystal bulk materials, thermoelectric thin films are more suitable for the miniaturization of thermoelectric devices. Here, c-axis oriented CuRh1-xMgxO2 (x = 0, 0.05, and 0.1) thin films were prepared and the thermoelectric properties are reported. The power factor of a p-type 10% Mg-doped CuRhO2 thin film shows a large value of 535.7 mu W K-2 m(-1) at 300 K. The results suggest that the hole-doped CuRhO2 thin films can be regarded as potential p-type thermoelectric oxide and will pave an avenue to develop Rh-based thermoelectric thin films. Published under an exclusive license by AIP Publishing.

Automated summary

Designing and realizing high-efficiency p-type thermoelectric materials is crucial for integrated thermoelectric components. Thermoelectric thin films, compared to single crystal bulk materials, are more suitable for miniaturization. In this study, c-axis oriented CuRh1-xMgxO2 thin films were prepared and their thermoelectric properties were investigated. It was found that a p-type 10% Mg-doped CuRhO2 thin film exhibited a large power factor at 300 K, suggesting its potential as a p-type thermoelectric oxide for Rh-based thermoelectric thin films.