期刊
APPLIED PHYSICS LETTERS
卷 121, 期 11, 页码 -出版社
AIP Publishing
DOI: 10.1063/5.0103978
关键词
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资金
- Department of Energy/National Nuclear Security Administration [DE-NA000392]
- Air Force Office of Scientific Research GAME MURI [FA9550-18-1-0479]
- Ohio Department of Higher Education and Strategic Council for Higher Education under Ohio House Bill 49 of the 132nd General Assembly
In this study, we have developed an in situ Mg doping technique in plasma-assisted molecular beam epitaxy for compensating Si dopants and eliminating parasitic leakage paths in beta-Ga2O3. The technique achieved both abrupt and uniform Mg doping profiles over a wide range of concentrations. Capacitance-voltage characteristics confirmed the compensating effect of Mg dopants. Mg delta-doping was also shown to effectively eliminate source leakage in beta-Ga2O3 metal-semiconductor field effect transistor structure.
In this work, we develop in situ Mg doping techniques in plasma-assisted molecular beam epitaxy (PAMBE) of beta-Ga2O3 to compensate Si dopants at the substrate epilayer growth interface and eliminate parasitic leakage paths. Both abrupt and uniform Mg doping profiles over a wide range of concentrations were achieved in beta-Ga2O3 epilayers grown by PAMBE. Capacitance-voltage characteristics of Si and Mg co-doped samples confirmed the compensating effect of the Mg dopants. Mg delta-doping was then integrated into a beta-Ga2O3 metal-semiconductor field effect transistor structure and shown to be effective in eliminating source leakage. The results presented here show that Mg doping is a promising way to engineer insulating buffer layers for beta-Ga2O3 lateral devices grown by PAMBE.
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