期刊
APPLIED PHYSICS LETTERS
卷 121, 期 9, 页码 -出版社
AIP Publishing
DOI: 10.1063/5.0097518
关键词
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资金
- National Key R&D Program of China [2018YFA0209002, 2021YFA0718802]
- National Natural Science Foundation of China [61971464, 61727805, 11961141002]
- Jiangsu Excellent Young Scholar program [BK20200008]
- Jiangsu Shuangchuang program
- Fundamental Research Funds for the Central Universities
- Jiangsu Key Laboratory of Advanced Techniques for Manipulating Electromagnetic Waves
- U.S. Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences, and Engineering
- National Science Foundation [DMR-1901843]
Materials with in-plane electrical anisotropy have great potential for artificial synaptic devices. However, natural materials with strong intrinsic in-plane electrical anisotropy are rare. We introduce a simple strategy to produce extremely large electrical anisotropy via grating gating of a semiconductor two-dimensional electron gas (2DEG) of AlGaN/GaN. Our semiconductor device with controllable giant electrical anisotropy will stimulate new device applications.
Materials with in-plane electrical anisotropy have great potential for designing artificial synaptic devices. However, natural materials with strong intrinsic in-plane electrical anisotropy are rare. We introduce a simple strategy to produce extremely large electrical anisotropy via grating gating of a semiconductor two-dimensional electron gas (2DEG) of AlGaN/GaN. We show that periodically modulated electric potential in the 2DEG induces in-plane electrical anisotropy, which is significantly enhanced in a magnetic field, leading to an ultra large electrical anisotropy. This is induced by a giant positive magnetoresistance and a giant negative magnetoresistance under two orthogonally oriented in-plane current flows, respectively. This giant electrical anisotropy is in situ tunable by tailoring both the grating gate voltage and the magnetic field. Our semiconductor device with controllable giant electrical anisotropy will stimulate new device applications, such as multi-terminal memtransistors and bionic synapses. Published under an exclusive license by AIP Publishing.
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