Edge-controlled growth of single-crystal hexagonal boron nitride domains by chemical vapor deposition

Understanding the role of the edge during the growth of hexagonal boron nitride (hBN) by chemical vapor deposition (CVD) is essential for its controllable synthesis and applications. We demonstrated two kinds of hydrogen-induced edge evolution of single-crystal hBN domains over time on liquid Cu via CVD. The morphology and edge evolution of the hBN domains in growth were well explained by the kinetic Wulff construction theory. This work provides a detailed understanding of the role of the edge during the growth progress of hBN, which will be helpful for the production of wafer-scale single-crystalline hBN.

Automated summary

In this study, the role of the edge during the growth of hexagonal boron nitride (hBN) by chemical vapor deposition (CVD) was investigated. The researchers demonstrated two types of hydrogen-induced edge evolution of single-crystal hBN domains over time on liquid Cu via CVD. The results were well explained by the kinetic Wulff construction theory and provide insights into the production of large-scale single-crystalline hBN.