Impact of a prestrained graded InGaN/GaN interlayer towards enhanced optical characteristics of a multi-quantum well LED based on silicon substrate

This paper presents alternate pairs of InGaN/GaN prestrained layers with varying indium compositions, which are inserted between the GaN/InGaN MQW active region and the n-GaN layer in a light-emitting diode (LED) nano structure in order to obtain enhanced optical characteristics. The device is mounted on a silicon substrate followed by a GaN buffer layer that promotes charge injection by minimizing the energy barrier between the electrode and active layers. The designed device attains more than 2.897% enhancement in efficiency when compared with the conventional LED, which is attributed to the reduction of a polarization field within the MQW region. The proposed device with 15% indium composition in the prestrained layer attains a maximum efficiency of 85.21% and a minimized efficiency droop of 3.848% at an injection current of 40 mA, with high luminous power in the output spectral range. The device also shows a minimum blueshift in the spectral range, indicating a decrease in the piezoelectric polarization. (c) 2022 Optica Publishing Group

Automated summary

This paper presents the use of alternate pairs of InGaN/GaN prestrained layers with varying indium compositions in a light-emitting diode (LED) nanostructure to enhance its optical characteristics. The designed device shows improved efficiency and minimized efficiency droop compared to conventional LEDs, with high luminous power and minimal blueshift in the spectral range.