Fully Textured, Production-Line Compatible Monolithic Perovskite/Silicon Tandem Solar Cells Approaching 29% Efficiency

Perovskite/silicon tandem solar cells are promising avenues for achieving high-performance photovoltaics with low costs. However, the highest certified efficiency of perovskite/silicon tandem devices based on economically matured silicon heterojunction technology (SHJ) with fully textured wafer is only 25.2% due to incompatibility between the limitation of fabrication technology which is not compatible with the production-line silicon wafer. Here, a molecular-level nanotechnology is developed by designing NiOx/2PACz ([2-(9H-carbazol-9-yl) ethyl]phosphonic acid) as an ultrathin hybrid hole transport layer (HTL) above indium tin oxide (ITO) recombination junction, to serve as a vital pivot for achieving a conformal deposition of high-quality perovskite layer on top. The NiOx interlayer facilitates a uniform self-assembly of 2PACz molecules onto the fully textured surface, thus avoiding direct contact between ITO and perovskite top-cell for a minimal shunt loss. As a result of such interfacial engineering, the fully textured perovskite/silicon tandem cells obtain a certified efficiency of 28.84% on a 1.2-cm(2) masked area, which is the highest performance to date based on the fully textured, production-line compatible SHJ. This work advances commercially promising photovoltaics with high performance and low costs by adopting a meticulously designed HTL/perovskite interface.

Automated summary

This study develops a molecular-level nanotechnology to achieve high-performance perovskite/silicon tandem solar cells on fully textured wafer. By using a designed ultrathin hybrid hole transport layer, the cells obtain a certified efficiency of 28.84% on a 1.2 cm（2）masked area, which is the highest performance to date.