期刊
ADVANCED MATERIALS
卷 34, 期 47, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.202202390
关键词
diffusion length; perovskites; single crystals; solar cells; thickness-control
类别
资金
- King Abdullah University of Science and Technology (KAUST)
- Swiss Innovation Agency (Innosuisse) [46894.1 IP-ENG]
- ETH Zurich through the ETH+ Project SynMatLab: Laboratory for Multiscale Materials Synthesis
- Natural Sciences and Engineering Research Council (NSERC) of Canada
Single-crystal halide perovskites can maintain high charge-collection efficiency even with increased thickness without external bias. These findings are significant for the application of perovskite devices in optoelectronic applications that require a thick active layer.
Single-crystal halide perovskites exhibit photogenerated-carriers of high mobility and long lifetime, making them excellent candidates for applications demanding thick semiconductors, such as ionizing radiation detectors, nuclear batteries, and concentrated photovoltaics. However, charge collection depreciates with increasing thickness; therefore, tens to hundreds of volts of external bias is required to extract charges from a thick perovskite layer, leading to a considerable amount of dark current and fast degradation of perovskite absorbers. However, extending the carrier-diffusion length can mitigate many of the anticipated issues preventing the practical utilization of perovskites in the abovementioned applications. Here, single-crystal perovskite solar cells that are up to 400 times thicker than state-of-the-art perovskite polycrystalline films are fabricated, yet retain high charge-collection efficiency in the absence of an external bias. Cells with thicknesses of 110, 214, and 290 mu m display power conversion efficiencies (PCEs) of 20.0, 18.4, and 14.7%, respectively. The remarkable persistence of high PCEs, despite the increase in thickness, is a result of a long electron-diffusion length in those cells, which was estimated, from the thickness-dependent short-circuit current, to be approximate to 0.45 mm under 1 sun illumination. These results pave the way for adapting perovskite devices to optoelectronic applications in which a thick active layer is essential.
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