4.8 Article

Ru-Doping-Induced Spin Frustration and Enhancement of the Room-Temperature Anomalous Hall Effect in La2/3Sr1/3MnO3 Films

期刊

ADVANCED MATERIALS
卷 34, 期 47, 页码 -

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.202206685

关键词

anomalous Hall effect; skew-scattering; spin frustration; thin films; transition-metal oxides

资金

  1. National Basic Research Program of China [2020YFA0309100]
  2. National Natural Science Foundation of China [12074365, U2032218, 11974326]
  3. Fundamental Research Funds for the Central Universities [WK9990000102, WK2030000035, WK9990000108]
  4. Hefei Science Center CAS Foundation [2021HSC-UE010, 2021HSC-CIP017]
  5. Vienna Scientific Cluster (VSC)

向作者/读者索取更多资源

The study finds that Ru doping can enhance the anomalous Hall effect at room temperature in transition-metal-oxide heterostructures. The competition between ferromagnetic double-exchange interaction and antiferromagnetic superexchange interaction due to Ru doping leads to spin frustration and spin-glass state, significantly enhancing the extrinsic anomalous Hall effect.
In transition-metal-oxide heterostructures, the anomalous Hall effect (AHE) is a powerful tool for detecting the magnetic state and revealing intriguing interfacial magnetic orderings. However, achieving a larger AHE at room temperature in oxide heterostructures is still challenging due to the dilemma of mutually strong spin-orbit coupling and magnetic exchange interactions. Here, Ru-doping-enhanced AHE in La2/3Sr1/3Mn1-xRuxO3 epitaxial films is exploited. As the B-site Ru doping level increases up to 20%, the anomalous Hall resistivity at room temperature can be enhanced from n omega cm to mu omega cm scale. Ru doping leads to strong competition between the ferromagnetic double-exchange interaction and the antiferromagnetic superexchange interaction. The resultant spin frustration and spin-glass state facilitate a strong skew-scattering process, thus significantly enhancing the extrinsic AHE. The findings can pave a feasible approach for boosting the controllability and reliability of oxide-based spintronic devices.

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