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Article
Nanoscience & Nanotechnology
Hongrae Joh et al.
Summary: The proposed low-temperature annealing method for crystallization of Hf0.5Zr0.5O2 (HZO) thin films using focused microwave induced annealing technique shows promising results, allowing for the integration of HZO ferroelectric films on flexible substrates with robust ferroelectric properties.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Chemistry, Multidisciplinary
Adithi Krishnaprasad et al.
Summary: In this study, ultra-low-variability synapses were demonstrated using chemical vapor deposited 2D MoS2 and Ti/Au electrodes. The interface and device stability were verified using transmission electron microscopy and other techniques. Additionally, the feasibility of integrating MoS2 synapses with MoS2 leaky integrate-and-fire neurons for logic gate implementation was shown.
Article
Chemistry, Multidisciplinary
Yue Zhou et al.
Summary: This study demonstrates a 2T synaptic transistor design based on WSe2 ferroelectric transistors for implementing R-STDP learning rules. By utilizing the characteristics of ferroelectric polarization, multilevel conductance states and ultra-low nonlinearity are achieved. By applying rewards to the 2T unit, a spiking neural network is successfully trained and the classical cart-pole problem is solved.
ADVANCED MATERIALS
(2022)
Article
Physics, Applied
Ting Xu et al.
Summary: This study prepared a nonvolatile memory based on the floating-gate organic field-effect transistor and investigated the correlations between the microstructures of the floating gate and the memory performance. The physical mechanisms of carrier injection, transfer, and storage were also studied, along with the relationships between the charge-trapping capability of the floating-gate layers and key parameters of the memory.
APPLIED PHYSICS LETTERS
(2022)
Article
Chemistry, Physical
Haoyang Sun et al.
Summary: This study reports a flexible FTJ memristor grown on a mica substrate, which exhibits stable voltage-tuned multistates and robust resistive switching behavior after multiple bending cycles. Artificial neural network simulations based on experimental device behaviors demonstrate high recognition accuracies, highlighting the potential applications of this flexible FTJ as a data storage and processing device.
JOURNAL OF MATERIOMICS
(2022)
Article
Chemistry, Multidisciplinary
Sifan Li et al.
Summary: The study demonstrates a memristor crossbar array using large-scale hafnium diselenide thin films and a metal-assisted transfer technique, showing low switching voltage and energy, high recognition accuracy, and power efficiency. Hardware multiply-and-accumulate operation and programmable kernel-based image processing were successfully showcased.
ADVANCED MATERIALS
(2022)
Article
Chemistry, Multidisciplinary
Yue Liu et al.
Summary: This study reports a high-performing and reliable textile memristor made of robust Pt/CsPbBr3 fibers through an electric-field-assisted assembly method. The textile memristor exhibits excellent performance and reproducibility, and can be seamlessly integrated with textile electronics, providing an effective interactive interface for intelligent healthcare.
ADVANCED FUNCTIONAL MATERIALS
(2022)
Article
Chemistry, Multidisciplinary
Yesheng Li et al.
Summary: This paper presents a low-voltage memristor array based on an ultrathin PdSeOx/PdSe2 heterostructure switching medium, which solves the problem of random ion transport in traditional memristors, achieving remarkable uniform switching with low variability. Convolutional image processing with high recognition accuracy was also achieved by using various crossbar kernels.
ADVANCED MATERIALS
(2022)
Article
Chemistry, Physical
Seokyeon Yun et al.
Summary: The study explored the creation of a Ni/ZnO/TiN memristor device for emulating an artificial synapse in a neuromorphic system, characterized through various chemical and material analysis methods. The device exhibited multi-level resistive switching behavior, showcasing both short-term and long-term memory characteristics. Different parameters, such as voltage and time interval, were found to impact the conductance of the device during repetitive pulses.
APPLIED SURFACE SCIENCE
(2022)
Article
Engineering, Electrical & Electronic
P. Praveen et al.
Summary: This paper investigates the influence of the top electrode on the resistive switching behavior of ZnO memristive devices, and finds that different top electrode materials can lead to different resistive switching mechanisms. The study in this paper is of great significance for further understanding the relationship between the performance and structure of memristive devices.
MICROELECTRONICS JOURNAL
(2022)
Article
Materials Science, Multidisciplinary
Aftab Saleem et al.
Summary: This paper demonstrates a reliable bilayer flexible memristor that mimics synaptic characteristics through oxygen concentration engineering in oxide layers. The device exhibits stable switching behavior and multilevel cell characteristic, making it suitable for synaptic application. The presence of oxide layers and change in oxygen vacancy concentration are examined using various techniques. The device shows good performance in terms of potentiation and depression epochs, as well as bending resistance.
ADVANCED MATERIALS TECHNOLOGIES
(2022)
Article
Materials Science, Multidisciplinary
Li Zhang et al.
Summary: This paper presents a feasible approach for the realization of flexible neuromorphic computing systems by fabricating flexible Au/WOx/Pt/Mica memristors and demonstrating their highly adjustable resistance states and the functionality of biological synapses and neurons in different states.
MATERIALS TODAY PHYSICS
(2022)
Article
Nanoscience & Nanotechnology
Mahesh Y. Chougale et al.
Summary: This paper proposes a highly flexible and asymmetric memory device for high-density data storage and neuromorphic computing. The device shows excellent stability and exhibits synaptic learning properties, making it a potential candidate for pattern recognition applications.
ADVANCED ELECTRONIC MATERIALS
(2022)
Article
Chemistry, Multidisciplinary
Lingxiang Hu et al.
Summary: Neuromorphic computing (NC) is a new generation of artificial intelligence, with optoelectronic memristors considered promising candidates in this field. Researchers have developed an all-optically controlled analog memristor that can reversibly tune the memconductance by varying the wavelength of controlling light, showing potential for highly efficient applications in optoelectronic neural networks.
ADVANCED FUNCTIONAL MATERIALS
(2021)
Article
Physics, Applied
Ya Lin et al.
Summary: A low-power ZnO-based memristive synapse achieved by N-doping shows promising performance with energy consumption as low as 60 fJ per synaptic event. Essential synaptic learning functions have been demonstrated, and the device can still operate effectively even in bent states.
APPLIED PHYSICS LETTERS
(2021)
Article
Electrochemistry
Zhaozhu Qu et al.
Summary: A novel WOx-based memristor with Ti nano-island arrays was developed, showing improved switching stability and the formation of an oxygen vacancy conductive filament without the need for a forming process. Control over the size and density of the nano-islands enhances the device's performance.
ELECTROCHIMICA ACTA
(2021)
Article
Multidisciplinary Sciences
Giacomo Pedretti et al.
Summary: The study introduces the use of analog content addressable memory to accelerate tree-based model inference, achieving efficient model inference and significantly improving performance.
NATURE COMMUNICATIONS
(2021)
Article
Chemistry, Multidisciplinary
Xing Deng et al.
Summary: The research developed a flexible ionic gel-gated VO2 Mott transistor to simulate the functions of biological synapses, achieving short-term and long-term plasticity. By simulating an important sensory neuron, nociceptor, multiple key synaptic functions were successfully demonstrated in the synaptic transistor. The device exhibits high tolerance to bending deformation and maintains stable variations in multi-conductance states in potentiation and depression properties.
ADVANCED FUNCTIONAL MATERIALS
(2021)
Article
Multidisciplinary Sciences
Bin Zhang et al.
Summary: This study achieved a record high 90% production yield of polymer memristors by adopting a two-dimensional conjugation strategy, which also showed potential for miniaturization and low power consumption. By constructing coplanar macromolecules with 2D conjugated thiophene derivatives to enhance pi-pi stacking and crystallinity of the thin film, the entire polymer layer exhibited homogeneous switching, fast response times, and scalability into 100 nm scale.
NATURE COMMUNICATIONS
(2021)
Article
Chemistry, Multidisciplinary
Yifei Pei et al.
Summary: The visual perception system is crucial for human learning, and memristors show potential for efficient processing of natural information. A fully memristor-based artificial visual perception nervous system (AVPNS) successfully emulates functions of the biological visual nervous system, such as image perception, integration, and biosensitization, as well as simulations for speed meeting control systems in driverless automobiles.
Article
Chemistry, Multidisciplinary
Zehui Peng et al.
Summary: Tri-layer HfO2/BiFeO3/BFO/HfO2 memristors, designed with traditional ferroelectric BFO layers and thickness optimization, exhibit excellent resistive switching performance, multi-level storage ability, and successful realization of essential synaptic functions. Conductive filaments composed of Hafnium single crystal are observed to enhance RS behavior, showing promising potential for neuromorphic computing.
ADVANCED FUNCTIONAL MATERIALS
(2021)
Article
Chemistry, Multidisciplinary
Zhiyong Wang et al.
Summary: Neural systems can efficiently process information by selectively filtering and memorizing spatiotemporal information. A novel multifunctional memristor based on metalloporphyrin/oxide hybrid heterojunction is proposed and demonstrated, showing smooth, gradual conductive transitions. The memristive characteristics of this hybrid system can be modulated by altering the metal center, offering potential applications in neural-signal analysis.
ADVANCED MATERIALS
(2021)
Article
Chemistry, Multidisciplinary
Guanglong Ding et al.
Summary: In this study, a WSe2-based memtransistor is fabricated for mimicking both homosynaptic and heterosynaptic plasticity. By optimizing input conditions, the number and linearity of resistance states can be improved. The device offers highly adjustable and reconfigurable characteristics, providing more freedom for tuning synaptic weight, optimizing circuit design, and building artificial neuromorphic computing systems.
Article
Chemistry, Multidisciplinary
Boyuan Mu et al.
Summary: Computing based on artificial neuron networks is expected to enhance computing efficiency and has broad prospects in artificial visual systems. By inserting organic small molecule IR-780 iodide into memory devices, artificial synaptic functions can be regulated effectively.
Article
Multidisciplinary Sciences
Rohit Abraham John et al.
Summary: The study explores the use of one-dimensional halide perovskite memristors to design security primitives for key generation and device authentication, offering a new solution to the challenge of efficient roots of trust for resource-constrained hardware.
NATURE COMMUNICATIONS
(2021)
Article
Materials Science, Multidisciplinary
Vaishnavi Krishnamurthi et al.
Summary: A liquid metal exfoliation technique was utilized to obtain millimeter-scale ZnO nanosheets with a thickness down to 5 nm, showcasing their potential applications in high-performance electronic and optoelectronic devices.
ADVANCED OPTICAL MATERIALS
(2021)
Article
Chemistry, Physical
Sanghyeon Choi et al.
Summary: This study presents a novel three-terminal memristor architecture by vertically integrating a gate-tunable SiOx memristor and graphene barristor, improving electrical performance and energy consumption. Additionally, nonvolatile universal logic gates were successfully implemented, showcasing the potential application of gate-tunable SiOx memristors in fast, low-energy electronic devices.
Article
Nanoscience & Nanotechnology
Hea-Lim Park et al.
Summary: Solution-processed organic memristors have tunable functionality, making them ideal for bio-realistic neuromorphic electronics, but achieving high-density arrays is challenging. A novel structure with high self-selectivity has been developed for practical crossbar arrays, showcasing reliable recognition performance in neural networks. This concept will pave the way for next-generation flexible memory and neuromorphic systems linked to artificial intelligence.
ADVANCED ELECTRONIC MATERIALS
(2021)
Article
Engineering, Electrical & Electronic
Min-Hwi Kim et al.
Summary: This study proposes an effective strategy for achieving the flexible 1T-1R synapse using a multifunctional organic memristor, and successfully develops an organic memristor based on hydrophobic fluoropolymer. The flexible synapse exhibits multilevel conductance with high reliability and stability, showing potential for high-density memory systems and practical neural networks. This concept could be a basic platform to realize smart wearable electronics.
NPJ FLEXIBLE ELECTRONICS
(2021)
Article
Chemistry, Physical
June-Mo Yang et al.
Summary: This study presents a flexible memristive artificial synapse based on Cs3Cu2I5 with extremely low energy consumption and high resistance, showing high linearity and stable synaptic weight updates. The synapse maintains a recognition rate of over 90% in MNIST-based recognition tasks, making it a promising candidate for highly efficient and reliable flexible artificial synapses.
NANOSCALE HORIZONS
(2021)
Article
Materials Science, Multidisciplinary
Chao Yun et al.
Summary: In the study of ionically conducting Na0.5Bi0.5TiO3, the link between growth parameters, stoichiometry and resistive switching behavior was explored, demonstrating the importance of specific vacancy structures in controlling resistive switching. High performance memristors were achieved through tuning of oxygen vacancy control and growth temperature.
JOURNAL OF MATERIALS CHEMISTRY C
(2021)
Article
Chemistry, Multidisciplinary
Jia-Lin Meng et al.
Summary: This paper proposes a flexible low-dimensional memristor based on boron nitride, which features ultra-low power consumption, reliable digital memcomputing capabilities, and ultrafast neuromorphic computing capabilities. The memristor successfully implements logic-in-memory operations like FALSE, IMP, and NAND, opening up new possibilities for the development of next-generation in-memory computing architectures.
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ORGANIC ELECTRONICS
(2020)
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(2020)
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ACS APPLIED ELECTRONIC MATERIALS
(2020)
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(2018)
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