Visualizing In-Plane Junctions in Nitrogen-Doped Graphene

Controlling the spatial distribution of dopants in graphene is the gateway to the realization of graphene-based electronic components. Here, it is shown that a submonolayer of self-assembled physisorbed molecules can be used as a resist during a post-synthesis nitrogen doping process to realize a nanopatterning of nitrogen dopants in graphene. The resulting formation of domains with different nitrogen concentrations allows obtaining n-n' and p-n junctions in graphene. A scanning tunneling microscopy is used to measure the electronic properties of the junctions at the atomic scale and reveal their intrinsic width that is found to be approximate to 7 nm corresponding to a sharp junction regime.

Automated summary

This study demonstrates the realization of nanopatterning of nitrogen dopants in graphene by using a submonolayer of self-assembled physisorbed molecules as a resist during post-synthesis nitrogen doping process. The resulting domains with different nitrogen concentrations enable the formation of n-n' and p-n junctions in graphene. The electronic properties of the junctions were measured at the atomic scale using scanning tunneling microscopy, revealing an intrinsic width of approximately 7 nm corresponding to a sharp junction regime.