Atomistic Insight into the Epitaxial Growth Mechanism of Single-Crystal Two-Dimensional Transition-Metal Dichalcogenides on Au(111) Substrate

Review Chemistry, Multidisciplinary

Wafer-scale single-orientation 2D layers by atomic edge-guided epitaxial growth

Yi Wan et al.

Summary: This review provides a systematic summary of the critical factors for synthesizing single-orientation 2D layers, with a focus on the role of atomic edge-guided epitaxial growth in the wafer-scale growth of single-crystal 2D layers.

CHEMICAL SOCIETY REVIEWS (2022)

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Article Nanoscience & Nanotechnology

Dual-coupling-guided epitaxial growth of wafer-scale single-crystal WS2 monolayer on vicinal a-plane sapphire

Jinhuan Wang et al.

Summary: Epitaxial growth of two-inch single-crystal WS2 monolayer films on vicinal a-plane sapphire surfaces has been achieved, driven by a dual-coupling-guided mechanism resulting in unidirectional alignment of WS2 islands. The high quality of WS2 monolayers is evidenced by a photoluminescent circular helicity of about 55%, comparable to exfoliated WS2 flakes. The findings offer the opportunity to boost the production of wafer-scale single crystals of various two-dimensional materials on insulators for applications in integrated devices.

NATURE NANOTECHNOLOGY (2022)

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Article Multidisciplinary Sciences

Vertical MoS2 transistors with sub-1-nm gate lengths

Fan Wu et al.

Summary: In this study, sidewall MoS2 transistors with sub-1 nm physical gate length were successfully fabricated by using the edge of a graphene layer as the gate electrode. These devices exhibit excellent performance characteristics and could potentially advance the scaling down of next-generation electronic devices.

NATURE (2022)

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Article Multidisciplinary Sciences

Epitaxial single-crystal hexagonal boron nitride multilayers on Ni (111)

Kyung Yeol Ma et al.

Summary: Large-area single-crystal trilayer hBN has been successfully grown using a chemical vapour deposition (CVD) method. The hBN film acts as a protective layer and shows potential in the fabrication of 2D semiconductors.

NATURE (2022)

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Advancing Monolayer 2-D nMOS and pMOS Transistor Integration From Growth to Van Der Waals Interface Engineering for Ultimate CMOS Scaling

Chelsey Dorow et al.

Summary: 2-D-material channels are crucial for scaling MOSFET transistors and maintaining Moore's Law progression. Improvements in contact resistance, device performance, and growth techniques were demonstrated for both n- and p-MOSFETs using monolayer transition metal dichalcogenide (TMD) channels. Transfer-free, area-selective seeded growth techniques were shown as promising options for wafer-scale TMD channel growth.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2021)

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Article Multidisciplinary Sciences

Promises and prospects of two-dimensional transistors

Yuan Liu et al.

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NATURE (2021)

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Strain-Engineered Rippling and Manipulation of Single-Layer WS2 by Atomic Force Microscopy

Fei Pang et al.

Summary: In this study, strain-engineered rippling structure and manipulation of rippling domain in monolayer WS2 flakes were systematically investigated using atomic force microscopy (AFM). The zigzag-orientated rippling domains with three-equivalent directions were visualized and manipulated via AFM scanning. These findings will be beneficial in understanding and controlling not only the rippling structures but also the rippling-related electronic and optical properties of 2D materials.

JOURNAL OF PHYSICAL CHEMISTRY C (2021)

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Review Engineering, Electrical & Electronic

Transistors based on two-dimensional materials for future integrated circuits

Saptarshi Das et al.

Summary: This paper examines the development of field-effect transistors based on two-dimensional materials for VLSI technology, highlighting the challenges that need to be addressed such as reducing contact resistance, stable doping schemes, mobility engineering, and high-k dielectric integration. The review emphasizes the importance of large-area growth of uniform 2D layers in ensuring low defect density and clean interfaces. Furthermore, potential applications of 2D transistors in various futuristic technologies are discussed.

NATURE ELECTRONICS (2021)

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Editorial Material Engineering, Electrical & Electronic

Monolayer transistors at wafer scales

Du Xiang et al.

Summary: Monolayer transition metal dichalcogenide transistors can be fabricated on 300 mm wafers using an approach that is compatible with back-end-of-line process temperatures. This method allows for the production of monolayer transistors while being compatible with back-end-of-line process temperatures.

NATURE ELECTRONICS (2021)

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Article Chemistry, Multidisciplinary

In Situ Variable-Temperature Scanning Tunneling Microscopy Studies of Graphene Growth Using Benzene on Pd(111)

Pedro Arias et al.

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Wafer-scale single-crystal hexagonal boron nitride monolayers on Cu (111)

Tse-An Chen et al.

NATURE (2020)

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Epitaxial Growth of Centimeter-Scale Single-Crystal MoS2 Monolayer on Au(111)

Pengfei Yang et al.

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Investigation of growth-induced strain in monolayer MoS2 grown by chemical vapor deposition

Siwei Luo et al.

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Charge Density Modulation and the Luttinger Liquid State in MoSe2 Mirror Twin Boundaries

Yipu Xia et al.

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Wafer-Scale Highly Oriented Monolayer MoS2 with Large Domain Sizes

Qinqin Wang et al.

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Epitaxial growth of a 100-square-centimetre single-crystal hexagonal boron nitride monolayer on copper

Li Wang et al.

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Thermal Expansion Coefficient of Monolayer Molybdenum Disulfide Using Micro-Raman Spectroscopy

Lenan Zhang et al.

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Wafer-scale and deterministic patterned growth of monolayer MoS2via vapor-liquid-solid method

Shisheng Li et al.

NANOSCALE (2019)

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Epitaxial growth of single-orientation high-quality MoS2 monolayers

Harsh Bana et al.

2D MATERIALS (2018)

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Wafer-scale single-crystal hexagonal boron nitride film via self-collimated grain formation

Joo Song Lee et al.

SCIENCE (2018)

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Inversion Domain Boundary Induced Stacking and Bandstructure Diversity in Bilayer MoSe2

Jinhua Hong et al.

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Temperature coefficient of resistance and thermal expansion coefficient of 10-nm thick gold films

A. I. Oliva et al.

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Wafer-Scale Growth and Transfer of Highly-Oriented Monolayer MoS2 Continuous Films

Hua Yu et al.

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Fermi Level Pinning at Electrical Metal Contacts of Monolayer Molybdenum Dichalcogenides

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Two dimensional WS2 lateral heterojunctions by strain modulation

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MoS2 Field-Effect Transistor with Sub-10 nm Channel Length

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MoS2 transistors with 1-nanometer gate lengths

Sujay B. Desai et al.

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Step-Edge-Guided Nucleation and Growth of Aligned WSe2 on Sapphire via a Layer-over-Layer Growth Mode

Liang Chen et al.

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Oriented Growth of Gold Nanowires on MoS2

Daisuke Kiriya et al.

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Atomic layer deposition of a MoS2 film

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Wafer-Scale Growth of Single-Crystal Monolayer Graphene on Reusable Hydrogen-Terminated Germanium

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Reducing Contact Resistance in Graphene Devices through Contact Area Patterning

Joshua T. Smith et al.

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In situ scanning electron microscopy of graphene growth on polycrystalline Ni substrate

Katsuhiro Takahashi et al.

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Sample preparation for atomic-resolution STEM at low voltages by FIB

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A consistent and accurate ab initio parametrization of density functional dispersion correction (DFT-D) for the 94 elements H-Pu

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JOURNAL OF CHEMICAL PHYSICS (2010)

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Atomistic Insight into the Epitaxial Growth Mechanism of Single-Crystal Two-Dimensional Transition-Metal Dichalcogenides on Au(111) Substrate

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