期刊
ACS APPLIED MATERIALS & INTERFACES
卷 14, 期 36, 页码 41156-41164出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.2c07679
关键词
electron beam; Schottky barrier height; van der Waals semiconductor; selective-area doping; MoTe2
资金
- Taiwan Ministry of Science and Technology [MOST 109-2112-M-005-013-MY3, 110-2811-M-005-516, 110-2119-M-007-003-MBK, 111-2923-M-005-001-MY3]
- Center for Semiconductor Technology Research from The Featured Areas Research Center Program within Ministry of Education (MOE) in Taiwan
- Center for Emergent Functional Matter Science of National Chiao Tung University from The Featured Areas Research Center Program within Ministry of Education (MOE) in Taiwan
- Ministry of Science and Technology, Taiwan [MOST-1092634-F-009-029, 110-2634-F-009-027]
This research demonstrates that diffused electron beam energy (DEBE) treatment can lower the Schottky barrier height and enable direct writing of electrical circuitry on van der Waals semiconductors. DEBE allows for selective-area doping, enabling the formation of both n-type and p-type doped channels within the same atomic plane, resulting in nonvolatile and homogeneous devices.
Contact engineering of two-dimensional semiconductors is a central issue for performance improvement of micro-/ nanodevices based on these materials. Unfortunately, the various methods proposed to improve the Schottky barrier height normally require the use of high temperatures, chemical dopants, or complex processes. This work demonstrates that diffused electron beam energy (DEBE) treatment can simultaneously reduce the Schottky barrier height and enable the direct writing of electrical circuitry on van der Waals semiconductors. The electron beam energy projected into the region outside the electrode diffuses into the main channel, producing selective-area n-type doping in a layered MoTe2 (or MoS2) field-effect transistor. As a result, the Schottky barrier height at the interface between the electrode and the DEBE-treated MoTe(2 )channel is as low as 12 meV. Additionally, because selective-area doping is possible, DEBE can allow the formation of both n-and p-type doped channels within the same atomic plane, which enables the creation of a nonvolatile and homogeneous MoTe2 p-n rectifier with an ideality factor of 1.1 and a rectification ratio of 1.3 x 10(3). These results indicate that the DEBE method is a simple, efficient, mask-free, and chemical dopant-free approach to selective-area doping for the development of van der Waals electronics with excellent device performances.
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