4.8 Article

Observation of Moire Patterns in Twisted Stacks of Bilayer Perovskite Oxide Nanomembranes with Various Lattice Symmetries

期刊

ACS APPLIED MATERIALS & INTERFACES
卷 14, 期 44, 页码 50386-50392

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsami.2c14746

关键词

twisted bilayer; freestanding perovskite nanomembranes; moire lattice structures; transmission electron microscopy

资金

  1. National Natural Science Foundation of China [12074044]
  2. Fund of State Key Laboratory of Information Photonics and Optical Communications (BUPT)
  3. Fundamental Research Funds for the Central Universities (BUPT)
  4. Natural Science Foundation of Tianjin [CityU 11303619]
  5. Research Grants Council of Hong Kong through General Research Fund [CityU 11303619, CityU 11309622]
  6. City University of Hong Kong through Strategic Interdisciplinary Research Grant [7020016]

向作者/读者索取更多资源

This study reveals a method for constructing artificial oxide heterostructures based on high-quality nanomembrane structures, and provides a material foundation for investigating moire-related electronic effects in twisted oxide thin films.
The design and fabrication of novel quantum devices in which exotic phenomena arise from moire physics have sparked a new race of conceptualization and creation of artificial lattice structures. This interest is further extended to the research on thin-film transition metal oxides, with the goal of synthesizing twisted layers of perovskite oxides concurrently revealing moire landscapes. By utilizing a sacrificial-layer-based approach, we show that such high-quality twisted bilayer oxide nanomembrane structures can be achieved. We observe atomicscale distinct moire patterns directly formed with different twist angles, and the symmetry-inequivalent nanomembranes can be stacked together to constitute new complex moire configurations. This study paves the way to the construction of higher-order artificial oxide heterostructures based on different materials/symmetries and provides the materials foundation for investigating moire-related electronic effects in an expanded selection of twisted oxide thin films.

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