期刊
ACS APPLIED MATERIALS & INTERFACES
卷 14, 期 35, 页码 40361-40370出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.2c07912
关键词
poly(ionic liquid); organic thin-film transistor (OTFT); electrolyte-gated transistor (EGT); grazing-incidence small-angle X-ray scattering (GISAXS); block copolymer self-assembly
资金
- Natural Sciences and Engineering Research Council of Canada (NSERC) [RGPIN-2017-03732, RGPIN/2015-509 03987]
- University of Ottawa
- University of Saskatchewan
- Canada Research Chair program
- CFI
- NSERC
- Government of Saskatchewan
- Western Economic Diversification Canada
- National Research Council Canada
- Canadian Institutes of Health Research
The development of printable active materials for wearable electronics is important for low voltage operation. Polymeric ionic liquid (PIL) block copolymers have shown promise as gating materials for organic thin-film transistors (OTFTs) due to their thickness-independent double-layer capacitance. In this study, the self-assembly of PILs on a semiconducting polymer was investigated, and the influence on OTFT performance was examined.
The widespread realization of wearable electronics requires printable active materials capable of operating at low voltages. Polymerized ionic liquid (PIL) block copolymers exhibit a thickness-independent double-layer capacitance that makes them a promising gating medium for the development of organic thin-film transistors (OTFTs) with low operating voltages and high switching speed. PIL block copolymer structure and self-assembly can influence ion conductivity and the resulting OTFT performance. In an OTFT, self-assembly of the PIL gate on the semiconducting polymer may differ from bulk self-assembly, which would directly influence electrical double-layer formation. To this end, we used poly{[N,N'-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5'-(2,2'-bithiophene)} (P(NDI2OD-T2)) as a model semiconductor for our OTFTs, on which our PILs exhibited self-assembly. In this study, we explore this critical interface by grazing-incidence small-angle X-ray scattering (GISAXS) and atomic force microscopy (AFM) of P(NDI2OD-T2) and a series of poly(styrene)-b-poly(1-(4-vinylbenzyl)-3-butylimidazolium-random-poly(ethylene glycol) methyl ether methacrylate) (poly(S)-b-poly(VBBI+[X]-r-PEGMA)) block copolymers with varying PEGMA/VBBI+ ratios and three different mobile anions (where X = TFSI-, PF6-, or BF4-). We investigate the thin-film self-assembly of block copolymers as a function of device performance. Overall, a mixed orientation at the interface leads to improved device performance, while predominantly hexagonal packing leads to nonfunctional devices, regardless of the anion present. These PIL gated OTFTs were characterized with a threshold voltage below 1 V, making understanding of their structure-property relationships crucial to enabling the further development of high-performance gating materials.
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