4.8 Article

Bending Modulated Ultralarge Magnetoresistance in Flexible La0.67Ba0.33MnO3 Thin Film Based Device

期刊

ACS APPLIED MATERIALS & INTERFACES
卷 14, 期 43, 页码 48868-48875

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsami.2c13550

关键词

flexible electronics; magnetoresistance; epitaxial thin film; anisotropic conductivity; perovskite oxide

资金

  1. National Natural Science Foundation of China
  2. Fundamental Research Funds for the Central Universities
  3. [12104357]
  4. [51702255]
  5. [62001371]
  6. [U2032168]
  7. [51390472]

向作者/读者索取更多资源

Magnetoresistance-based devices have attracted attention due to their ability to use spins as information carriers. However, these devices face challenges such as limited magnetoresistance ratios, low work temperature, or high magnetic field. This study introduces a flexible bending-controlled magneto-resistance device based on the La0.67Ba0.33MnO3 film, achieving high magnetoresistive performance and suggesting possible applications such as tunable multistage switches.
Magnetoresistance based information devices have attracted much attention due to the ability to utilize spins as information carriers. To promote the magnetoresistance-based devices, ultrahigh magnetoresistance ratios are highly desirable for magnetic sensing, memory, and artificial intelligent devices, etc. However, today the magnetoresistance devices are facing the challenge of limited magnetoresistance ratio, low work temper-ature, or high magnetic field, which calls for proper theories and mechanisms. To address it, we first introduce the flexible bending-controlled magneto -resistance device based on the La0.67Ba0.33MnO3 film. Due to the anisotropic resistance of the La0.67Ba0.33MnO3 film and the nonlinear amplification effect of the Zener diode, the device has exhibited strong magnetoresistive performance (similar to 8725% at 1 T, 300 K). Combining the assist from mechanical bending and diode, high magnetic field sensitivity with large magneto -resistance ratio (similar to 1.7 x 104% at 1 T, 300 K) and low work current (similar to 0.15 mA) is simultaneously achieved at room temperature, which is over 104 times larger than that of the planar La0.67Ba0.33MnO3 film. Based on the above results, we propose one but not the only possible application as tunable multistage switch. Our findings may pave a strategy to develop flexible diode-enhanced magnetoresistance device with ultrahigh magnetoresistance ratios and bending tunable performances.

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