期刊
ACS APPLIED MATERIALS & INTERFACES
卷 -, 期 -, 页码 -出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.2c11960
关键词
molecular design; heteroaromatic semiconductors; multilevel resistive memory; ReRAM; data storage; organic electronics
资金
- National Natural Science Foundation of China [21808149, 202110332085E]
- Natural Science Foundation of Jiangsu Province [BK20190939]
- Natural Science Foundation of the Jiangsu Higher Education Institutions of China [19KJB150018]
- foundation of Key Laboratory of Synthetic and Biological Colloids, Ministry of Education, Jiangnan University [1042050205225990/007]
- City University of Hong Kong [9380117, 7005620, 7020040]
- Hong Kong Institute for Advanced Study, City University of Hong Kong, Hong Kong, P. R. China
- Jiangsu Key Disciplines of the Fourteenth Five-Year Plan [2021135]
- 2021 National Undergraduate Innovation and Entrepreneurship Training Program [22008164]
Controlling the performance of N-containing heteroaromatic semiconductors through molecular-shape engineering enables reliable binary to ternary ReRAM switching. This study sheds light on the potential of N-containing heteroaromatic semiconductors for promising ultrahigh-density data-storage ReRAM applications.
In organic resistive random-access memory (ReRAM) devices, deeply understanding how to control the performance of pi-conjugated semiconductors through molecular-shape-engineering is important and highly desirable. Herein, we design a family of N-containing heteroaromatic semiconductors with molecular shapes moving from mono-branched 1Q to di-branched 2Q and tri-branched 3Q. We find that this molecular-shape engineering can induce reliable binary to ternary ReRAM switching, affording a highly enhanced device yield that satisfies the practical requirement. The density functional theory calculation and experimental evidence suggest that the increased multiple paired electroactive nitrogen sites from mono-branched 1Q to tri-branched 3Q are responsible for the multilevel resistance switching, offering stable bidentate coordination with the active metal atoms. This study sheds light on the prospect of N-containing heteroaromatic semiconductors for promising ultrahigh-density data-storage ReRAM application.
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