期刊
ADVANCED FUNCTIONAL MATERIALS
卷 26, 期 14, 页码 2357-2364出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.201502412
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资金
- National Science Foundation
- National Institutes of Health/National Institute of General Medical Sciences under NSF [DMR-0936384, DMR-1332208]
- DoD
- Air Force Office of Scientific Research
- National Defense Science and Engineering Graduate (NDSEG) Fellowship Program [32 CFR 168a]
- NSF MRSEC grant through Princeton Center for Complex Materials [DMR-1420541]
Though charge transport is sensitive to subtle changes in the packing motifs of molecular semiconductors, research addressing how intermolecular packing influences electrical properties has largely been carried out on single-crystals, as opposed to the more technologically relevant thin-film transistors (TFTs). Here, independent and reversible access to the monoclinic and triclinic crystal structures of a core-chlorinated naphthalene tetracarboxylic diimide (NTCDI-1) is demonstrated in polycrystalline thin films via post-deposition annealing. Time-resolved measurements of these transitions via UV-visible spectroscopy and grazing-incidence X-ray diffraction indicate that the polymorphic transformations follow second-order Avrami kinetics, suggestive of 2D growth after initial nucleation. Thin-film transistors comprising triclinic NTCDI-1 consistently outperform those comprising its monoclinic counterpart. This behavior contrasts that of single-crystal transistors in which devices comprising monoclinic crystals are consistently superior to devices with triclinic crystals. This difference is attributed to more uniform in-plane charge transport in polycrystalline thin films having the triclinic compared to the monoclinic polymorph. As the mobility of TFTs is a reflection of ensemble-average charge transport across crystalline grains having different molecular orientations, this study suggests that among different polymorphs of a particular molecular semiconductor, those with smaller in-plane anisotropy are more beneficial for efficient lateral charge transport in polycrystalline devices.
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