Naphthyl Methylacrylate Block Copolymer Insulators for Application in Pentacene Organic Thin-Film Transistors

In this paper, we prepared a series of aryl group functionalized polymers, via the reversible addition-fragmentation chain transfer (RAFT) polymerization, used as insulator layer materials for pentacene thin-film transistors. The poly(methyl methacrylate) (PMMA)-based block polymers contain naphthyl side groups that could induce ordered morphology of pentacene due to pi-pi interaction. Furthermore, the block polymers can effectively increase the dielectric constant (6.59), resulting in a threshold voltage drop from -15 V to -7 V.

Automated summary

In this study, a series of aryl group functionalized polymers were prepared via RAFT polymerization for use as insulator materials in pentacene thin-film transistors. The block polymers containing naphthyl side groups induced an ordered morphology of pentacene through pi-pi interactions and increased the dielectric constant, resulting in a lower threshold voltage.