期刊
ACS APPLIED POLYMER MATERIALS
卷 -, 期 -, 页码 -出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsapm.2c00779
关键词
organic thin film transistors; pentacene; dielectric materials; RAFT polymerization; polymer
资金
- National Natural Science Foundation of China [81671033]
- Sanyou Intelligent Manufacturing & Technology Co. Ltd [2019286]
In this study, a series of aryl group functionalized polymers were prepared via RAFT polymerization for use as insulator materials in pentacene thin-film transistors. The block polymers containing naphthyl side groups induced an ordered morphology of pentacene through pi-pi interactions and increased the dielectric constant, resulting in a lower threshold voltage.
In this paper, we prepared a series of aryl group functionalized polymers, via the reversible addition-fragmentation chain transfer (RAFT) polymerization, used as insulator layer materials for pentacene thin-film transistors. The poly(methyl methacrylate) (PMMA)-based block polymers contain naphthyl side groups that could induce ordered morphology of pentacene due to pi-pi interaction. Furthermore, the block polymers can effectively increase the dielectric constant (6.59), resulting in a threshold voltage drop from -15 V to -7 V.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据