High-Efficiency and High-Power Multijunction InGaAs/InP Photovoltaic Laser Power Converters for 1470 nm

The high-efficiency capabilities of multijunction laser power converters are demonstrated for high-power applications with an optical input of around 1470 nm. The InP-based photovoltaic power converting III-V semiconductor devices are designed here, with 10 lattice-matched subcells (PT10-InGaAs/InP), using thin InGaAs absorbing layers connected by transparent tunnel junctions. The results confirm that such long-wavelength power converter devices are capable of producing electrical output voltages greater than 4-5 V. The characteristics are compatible with common electronics requirements, and the optical input is well suited for propagation over long distances through fiber-based optical links. Conversion efficiencies of similar to 49% are measured at electrical outputs exceeding 7 W for an input wavelength of 1466 nm at 21 degrees C. The Power Converter Performance Chart has been updated with these PT10-InGaAs/InP results.

Automated summary

This study demonstrates the high-efficiency capabilities of multijunction laser power converters for high-power applications with an optical input of around 1470 nm. InP-based photovoltaic power converting III-V semiconductor devices are designed, with 10 lattice-matched subcells, using thin InGaAs absorbing layers connected by transparent tunnel junctions. The results show that these long-wavelength power converter devices can produce electrical output voltages greater than 4-5 V, making them compatible with common electronics requirements and suitable for long-distance transmission through fiber-based optical links.