期刊
SURFACES AND INTERFACES
卷 32, 期 -, 页码 -出版社
ELSEVIER
DOI: 10.1016/j.surfin.2022.102097
关键词
Trifluoroethyl methacrylate modification; All-inorganic CsPbIBr2 planar perovskite solar cells; Microstructure; Photoelectrical properties
类别
资金
- NSFC-Guangdong [U1801256]
- Guangdong Provincial Engineering Technology Research Center for Transparent Conductive Materials
- MOE International Laboratory for Optical Information Technologies and Natural Science Foundation of Guangdong Province [2020A1515010731]
- Guangdong Provincial Key Laboratory [2020B1212060066]
This study focuses on improving the performance of CsPbIBr2 perovskite solar cells by using TFEMA, which results in enhanced efficiency due to optimized microstructure, reduced carrier recombination, lower trap-state density, and promoted charge transfer.
Carbon-based all-inorganic CsPbIBr2 perovskite solar cells (PSCs) have attracted a lot of attention due to their simple fabrication process and good thermal stability. But the efficiency of devices is lower due to the poor quality of the solution-processed CsPbIBr2 film. A high-quality CsPbIBr2 film with large grain size, good crystallinity and reduced trap-state density is necessary for efficient PSCs. In this work, fluorine-containing trifluoroethyl methacrylate (TFEMA) is employed to improve the microstructure and photoelectrical properties of the low-temperature processed CsPbIBr2 film. Our all-inorganic PSCs consist of the FTO/TiO2/CsPbIBr2/carbon simple structure. The power conversion efficiency (PCE) of the modified PSCs using TFEMA (TFEMA-PSCs, 8.54%) is much higher than 31.8% of the Reference-PSCs (6.48%) and an open-circuit voltage (V-oc) of 1.305 V was achieved. The reasons for the improved performance have been systematically investigated. The characterizations show that the enhanced PCE in the TFEMA-PSCs can be ascribed to the optimized microstructure, decreased carrier recombination, reduced trap-state density and promoted charge transfer. This work provides an effective and facile strategy to prepare high-quality CsPbIBr2 films by low-temperature process.
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