4.7 Article

High Thermoelectric Performance in 2D Technetium Dichalcogenides TcX2 (X = S, Se, or Te)

期刊

ACS APPLIED ENERGY MATERIALS
卷 -, 期 -, 页码 -

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsaem.2c01170

关键词

Tc-based TMDs; 2D materials; thermoelectric properties; first-principles calculation; electronic properties; figure of merit (ZT)

资金

  1. National Center for Theoretical Sciences
  2. Ministry of Science and Technology of Taiwan [MOST-110-2112-M- 110-013-MY3]

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In recent years, the search for alternative energy sources, including thermoelectricity, has been a major research interest. Studies on transition-metal dichalcogenides (TMDs), such as technetium-based TMDs (TcX2), have also been unstoppable due to their unique properties. This study systematically investigated the structural stability, electronic properties, and thermoelectric properties of TcX2, particularly the 1T(dp) phase, using first-principles calculations. The results showed that the monolayer 1T(dp)-TcX2 could potentially have excellent thermoelectric properties, and reducing the dimensionality from bulk to monolayer could significantly improve the thermoelectric properties of TcTe2.
In recent years, the search for alternative energy sources has been of major research interest, and one of the potential solutions is thermoelectricity. Moreover, studies on the emergence of transition-metal dichalcogenides (TMDs) have been unstoppable because of their unique properties. Among this group of materials, technetium-based TMDs (TcX2, where X = S, Se, or Te) are one of the least investigated materials. Using first-principles calculations, we systematically studied the structural stability and electronic properties of bulk and monolayer TcX2 in 1T(dp) (1T double prime), 1T', 1T, and 2H crystal structures as well as the thermoelectric properties of the bulk and monolayer 1T(dp) phases. Formation energy calculations, phonon dispersion, and molecular dynamic simulation results revealed that only the 1TdP phase is stable, while 1T, 1T, and 2H are unstable. These findings imply the possible synthesis of monolayer 1T(dp)-TcX2. With regard to the electronic properties under the hybrid functional approach, bulk 1T(dp)-TcTe2, TcSe2, and TcS2 exhibit indirect band gaps of 0.37, 1.01, and 1.19 eV, respectively. For the monolayer phase, enlarged indirect band gaps of 1.21, 1.64, and 1.87 eV, respectively, were observed. Surprisingly, the calculated ZT numbers at 1200 K for monolayer TcTe2 are 1.78 (p-type) and 1.84 (n-type), which are comparable to those of the currently synthesized excellent thermoelectric materials. Finally, the thermoelectric properties of TcTe2 are significantly improved when reducing the dimensionality from bulk to monolayer at high temperatures. Our findings provide crucial evidence regarding the structural stability, robust electronic properties, and excellent thermoelectric properties in TcX2 for potential optoelectronic and thermoelectric applications.

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