Construction of hierarchical In2O3/In2S3 microsphere heterostructures for TEA detection

Construction of heterojunction has been considered as an efficient strategy to enhance the gas-sensing performances of metal oxide semiconductors. On this basis, hierarchical In2O3/In2S3 microsphere het-erostructures were synthesized by partial oxidation of In2S3 precursors which were obtained via a facile hydrothermal method. Besides, gas sensors based on the acquired materials were fabricated to inves-tigate their sensing performances toward triethylamine (TEA). The results reveal that the gas sensor based on In2O3/In2S3 exhibits a high response of 37 at 300 degrees C toward 0.45 mg/L TEA, which is 3.7 times higher than that of bare In2O3. Meanwhile, it also possesses fast response/recovery time (19 s/154 s), good repeatability, selectivity and long-term stability. The excellent sensing performances toward TEA are mainly attributed to the massive oxygen vacancy defects and heterojunction formed between In2O3 and In2S3. This work provides a facile temperature-dependent route to controllably synthesize hierar-chical In2O3/In2S3 microsphere heterostructures, and the In2O3/In2S3 sensor shows great application prospects in TEA detection.(c) 2022 The Chinese Ceramic Society. Production and hosting by Elsevier B.V. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/).

Automated summary

By synthesizing hierarchical In2O3/In2S3 microsphere heterostructures through hydrothermal synthesis and partial oxidation, gas sensors with excellent sensing performances towards triethylamine (TEA) were successfully fabricated.