A low cost Sn doped ZnO thin film based Schottky diode for UV detection

In this paper thin films of Sn doped ZnO was prepared via low-cost chemical sol-gel spin coating process. The Ohmic electrode Aluminum (Al) and Schottky electrode Palladium (Pd) on doped ZnO thin film were deposited through a hard mask by thermal evaporation techniques to obtain a planner Metal-Semiconductor-Metal (MSM) structure; hence present device was horizontal. The electrical characterization is used to analyze the UV detection capability of the fabricated device, and various calculated parameters include saturation current = 8.31 x 10(-7) A/cm(-2), ideality factor = 4.02, barrier height = 0.75 eV, etc. It was observed that forward and reversed bias current increases when exposed to Ultraviolet (UV) light. In addition, responsivity and series resistance are also reported in this paper.

Automated summary

This paper presents the preparation of Sn doped ZnO thin films using a low-cost chemical sol-gel spin coating process and the deposition of Ohmic and Schottky electrodes to form a Metal-Semiconductor-Metal (MSM) structure. The UV detection capability of the device was analyzed through electrical characterization, and various parameters including saturation current, ideality factor, and barrier height were calculated. The results showed an increase in forward and reversed bias current when exposed to UV light, and the responsivity and series resistance of the device were also reported.