Room-Temperature Printing of Ultrathin Quasi-2D GaN Semiconductor via Liquid Metal Gallium Surface Confined Nitridation Reaction

Outstanding wide-bandgap semiconductor material such as gallium nitride (GaN) has been extensively utilized in power electronics, radiofrequency amplifiers, and harsh environment devices. Due to its quantum confinement effect in enabling desired deep-ultraviolet emission, excitonic impact, and electronic transport features, 2D or ultrathin quasi-2D GaN semiconductors have been one of the most remarkable candidates for future growth of microelectronic devices. Here, for the first time, the authors report a large area, wide bandgap, and room-temperature quasi-2D GaN synthesis and printing strategy through introducing the plasma medicated liquid metal gallium surface-confined nitridation reaction mechanism. The developed direct fabrication and compositional process is consistent with various electronics manufacturing approaches and thus opens an easy going way for cost-effective growth of the third-generation semiconductor. In particular, the fully printed field-effect transistors relying on the GaN thus made show p-type switching with an on/off ratio greater than 10(5), maximum field-effect hole mobility of 53 cm(2) V-1 s(-1), and a small sub-threshold swing. As demonstrated, the present method allows to produce at room temperature the GaN with thickness spanning from 1 nanometer to nanometers. This basic method can be further extended, generalized, and utilized for making various electronic and photoelectronic devices in the coming time.

Automated summary

This study presents a synthesis and printing strategy for large area, wide bandgap, and room-temperature quasi-2D GaN through a plasma medicated liquid metal gallium surface-confined nitridation reaction mechanism. The developed fabrication process is compatible with various electronics manufacturing approaches, allowing for cost-effective growth of the third-generation semiconductor. The printed field-effect transistors based on the GaN exhibit p-type switching with high on/off ratio, high hole mobility, and small sub-threshold swing.